A Caltech Library Service

Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 µm

Kik, P. G. and Polman, A. and Libertino, S. and Coffa, S. (2002) Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 µm. Journal of Lightwave Technology, 20 (5). pp. 834-839. ISSN 0733-8724. doi:10.1109/JLT.2002.1007941.

See Usage Policy.


Use this Persistent URL to link to this item:


A new concept for an infrared waveguide detector based on silicon is introduced. It is fabricated using silicon-on-insulator material, and consists of an erbium-doped p-n junction located in the core of a silicon ridge waveguide. The detection scheme relies on the optical absorption of 1.5-µm light by Er3+ ions in the waveguide core, followed by electron-hole pair generation by the excited Er and subsequent carrier separation by the electric field of the p-n junction. By performing optical mode calculations and including realistic doping profiles, we show that an external quantum efficiency of 10^-3 can be achieved in a 4-cm-long waveguide detector fabricated using standard silicon processing. It is found that the quantum efficiency of the detector is mainly limited by free carrier absorption in the waveguide core, and may be further enhanced by optimizing the electrical doping profiles. Preliminary photocurrent measurements on an erbium-doped Si waveguide detector at room temperature show a clear erbium related photocurrent at 1.5 µm.

Item Type:Article
Related URLs:
URLURL TypeDescription
Polman, A.0000-0002-0685-3886
Additional Information:© Copyright 2002 IEEE. Reprinted with permission. Manuscript received April 2, 2001; revised February 15, 2002. This work was supported in part by the research program of the Foundation for fundamental research on matter (FOM), supported by the Dutch organization for scientific research (NWO), and in part by the Dutch technology foundation STW and the ESPRIT program of the European Union (SCOOP: Silicon-compatible optoelectronics). The authors would like to acknowledge N. Hamelin for some of the initial design calculations.
Subject Keywords:Erbium, infrared detectors, integrated optoelectronics, semiconductor junctions, silicon, waveguides
Issue or Number:5
Record Number:CaltechAUTHORS:KIKjlt02
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6056
Deposited By: Lindsay Cleary
Deposited On:16 Nov 2006
Last Modified:08 Nov 2021 20:30

Repository Staff Only: item control page