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Zero-bias Contact Resistances of Au-GaAs Scottky Barriers

McColl, M. and Millea, M. F. and Mead, C. A. (1971) Zero-bias Contact Resistances of Au-GaAs Scottky Barriers. Solid-State Electronics, 14 (8). pp. 677-683. ISSN 0038-1101. doi:10.1016/0038-1101(71)90147-X.

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The contact resistances of gold-GaAs Schottky barriers have been measured at liquid nitrogen temperatures over the range of electron concentrations between 3.2 × 10^(18) to 2.4 × 10^(19) cm^(−3). Our theoretical treatment is based on that of Padovani and Stratton but modified to include Franz's two-band model for the imaginary wave vector of the tunneling electrons and Conley and Mahan's correction to the space-charge potential in degenerate semiconductors. The results correlate well with the theory in the 3.2 × 10^(18) to 5.6 × 10^(18) cm^(−3) range of concentrations. The theory must be extended to include the effects of fluctuating depletion width (a suggestion originally made by Bethe) to adequately explain the low contact resistances observed with the heaviest doped GaAs. This material is a degenerate and heavily compensated tin-alloy regrowth commonly used as an ohmic contact.

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Additional Information:© 1971 Pergamon Press. Received 23 September 1970; in revised form 9 November 1970.
Issue or Number:8
Record Number:CaltechAUTHORS:20150929-091638824
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60588
Deposited On:29 Sep 2015 18:51
Last Modified:10 Nov 2021 22:35

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