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Characteristics of Aluminum-silicon Schottky Barrier Diode

Yu, A. Y. C. and Mead, C. A. (1970) Characteristics of Aluminum-silicon Schottky Barrier Diode. Solid-State Electronics, 13 (2). pp. 97-104. ISSN 0038-1101.

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Aluminumn-type silicon Schottky barrier diodes with near-ideal characteristics have recently been developed. In this paper the characteristics of such a Schottky barrier are discussed. The I–V characteristics agree well with the theoretical thermionic emission model. The barrier height is determined from the saturation current, temperature dependence of forward current, and photoemission to be0.69±0.01eV. The switching measurements show no minority carrier storage, as expected. The low-frequency noise is very low and is comparable to the best p-n junction and guard-ring Schottky barrier. These desirable features, coupled with the simple process of the Al-nSi Schottky barrier, make them attractive in a variety of applications.

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Additional Information:© 1970 Pergamon Press. Received 22 May 1969; in revised form 18 July 1969. Supported in part by the Office of Naval Research.
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Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:2
Record Number:CaltechAUTHORS:20150929-092612724
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60590
Deposited By: Kristin Buxton
Deposited On:29 Sep 2015 18:46
Last Modified:03 Oct 2019 08:58

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