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Permittivity of β-Ga_2O_3 at low frequencies

Hoeneisen, B. and Mead, C. A. and Nicolet, M-A. (1971) Permittivity of β-Ga_2O_3 at low frequencies. Solid-State Electronics, 14 (10). pp. 1057-1059. ISSN 0038-1101. doi:10.1016/0038-1101(71)90176-6.

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The relative dielectric constant ϵ_r of β-Ga_2O_3, in the direction perpendicular to the (100) plane is found to be 10.2 ±0.3. Within the measurement error ϵ_r is the same at 297°K and at 77°K, and is independent of frequency from 5 kHz to 500 kHz.

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Additional Information:© 1971 Pergamon Press. Received 28 January 1971; in revised form 4 March 1971.
Issue or Number:10
Record Number:CaltechAUTHORS:20150929-092908338
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60592
Deposited On:29 Sep 2015 18:45
Last Modified:10 Nov 2021 22:36

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