Hoeneisen, B. and Mead, C. A. and Nicolet, M-A. (1971) Permittivity of β-Ga_2O_3 at low frequencies. Solid-State Electronics, 14 (10). pp. 1057-1059. ISSN 0038-1101. doi:10.1016/0038-1101(71)90176-6. https://resolver.caltech.edu/CaltechAUTHORS:20150929-092908338
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Abstract
The relative dielectric constant ϵ_r of β-Ga_2O_3, in the direction perpendicular to the (100) plane is found to be 10.2 ±0.3. Within the measurement error ϵ_r is the same at 297°K and at 77°K, and is independent of frequency from 5 kHz to 500 kHz.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1971 Pergamon Press. Received 28 January 1971; in revised form 4 March 1971. | |||||||||
| Issue or Number: | 10 | |||||||||
| DOI: | 10.1016/0038-1101(71)90176-6 | |||||||||
| Record Number: | CaltechAUTHORS:20150929-092908338 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150929-092908338 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 60592 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 29 Sep 2015 18:45 | |||||||||
| Last Modified: | 10 Nov 2021 22:36 |
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