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Permittivity of β-Ga_2O_3 at low frequencies

Hoeneisen, B. and Mead, C. A. and Nicolet, M-A. (1971) Permittivity of β-Ga_2O_3 at low frequencies. Solid-State Electronics, 14 (10). pp. 1057-1059. ISSN 0038-1101. doi:10.1016/0038-1101(71)90176-6. https://resolver.caltech.edu/CaltechAUTHORS:20150929-092908338

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Abstract

The relative dielectric constant ϵ_r of β-Ga_2O_3, in the direction perpendicular to the (100) plane is found to be 10.2 ±0.3. Within the measurement error ϵ_r is the same at 297°K and at 77°K, and is independent of frequency from 5 kHz to 500 kHz.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0038-1101(71)90176-6DOIArticle
http://www.sciencedirect.com/science/article/pii/0038110171901766PublisherArticle
Additional Information:© 1971 Pergamon Press. Received 28 January 1971; in revised form 4 March 1971.
Issue or Number:10
DOI:10.1016/0038-1101(71)90176-6
Record Number:CaltechAUTHORS:20150929-092908338
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150929-092908338
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60592
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:29 Sep 2015 18:45
Last Modified:10 Nov 2021 22:36

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