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Influence of carrier diffusion effects on window thickness of semiconductor detectors

Caywood, J. M. and Mead, C. A. and Mayer, J. W. (1970) Influence of carrier diffusion effects on window thickness of semiconductor detectors. Nuclear Instruments and Methods, 79 (2). pp. 329-332. ISSN 0029-554X. https://resolver.caltech.edu/CaltechAUTHORS:20151007-161136079

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Abstract

Carrier diffusion effects within the depletion region can have a large influence in determining the window thickness x_w of surface barrier detectors. If the surface is assumed to be a perfect sink, carrier diffusion (against the drift field) to the surface leads to x_w ≈ kT/qE where E is the field at the surface. Calculated values of x_w are in reasonable agreement with previously published values of window thicknesses. Surface preparation techniques can influence the amount of charge lost, as can plasma erosion times.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0029-554X(70)90159-XDOIArticle
http://www.sciencedirect.com/science/article/pii/0029554X7090159XPublisherArticle
Additional Information:© 1970 North-Holland Publishing. Received 3 October 1969. The authors wish to sincerely thank Dr. T. C. McGill for suggestions concerning the computations and Drs. N. G. E. Johansson and O. Meyer for helpful discussions concerning interpretations of the results. The authors are especially grateful to Dr. P. Siffert for access to unpublished data.
Issue or Number:2
Record Number:CaltechAUTHORS:20151007-161136079
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20151007-161136079
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60880
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:07 Oct 2015 23:26
Last Modified:03 Oct 2019 09:01

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