Gavalas, G. R. and Megiris, C. E. and Nam, S. W. (1989) Deposition of H_2-permselective SiO_2 films. Chemical Engineering Science, 44 (9). pp. 1829-1835. ISSN 0009-2509. doi:10.1016/0009-2509(89)85125-5. https://resolver.caltech.edu/CaltechAUTHORS:20151104-112518407
Full text is not posted in this repository. Consult Related URLs below.
Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20151104-112518407
Abstract
Films of amorphous SiO_2 were deposited within the walls of porous Vycor tubes by SiH_4 oxidation in an opposing-reactants geometry: SiH_4 was passed inside the tube while O_2 was passed outside the tube. The two reactants diffused opposite to each other and reacted within a narrow front inside the tube wall to form a thin SiO_2 film. Once the pores were plugged the reactants could not reach each other and the reaction stopped. At 450°C and 0.1 and 0.33 atm of SiH_4 and O_2, the reaction was complete within 15 min. The thickness of the SiO_2 film was estimated to be about 0.1 μ. Measurements of H_2 and N_2 permeation rates showed that the SiO_2 film was highly selective to H_2 permeation. The H_2: N_2 flux at 450°C varied between 2000 and 3000. Thermal annealing at 600°C reduced somewhat that selectivity. Thermal annealing in the presence of H_2O vapor decreased further the flux of H_2 and increased the flux of H_2. Permeation of H_2 is believed to occur through an activated diffusion mechanism. Applications of such H_2-permeable films to membrane reactors for equilibrium-limited reactions are discussed.
| Item Type: | Article | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Related URLs: |
| |||||||||
| ORCID: |
| |||||||||
| Additional Information: | © 1989 Pergamon Press. Received 8 September 1988, Accepted 31 January 1989. This work was supported by NSF grant No. CBT-8806101. The authors acknowledge helpful discussions with Dr Dale Powers of Corning Glass Works. | |||||||||
| Funders: |
| |||||||||
| Issue or Number: | 9 | |||||||||
| DOI: | 10.1016/0009-2509(89)85125-5 | |||||||||
| Record Number: | CaltechAUTHORS:20151104-112518407 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20151104-112518407 | |||||||||
| Official Citation: | G.R. Gavalas, C.E. Megiris, S.W. Nam, Deposition of H2-permselective SiO2 films, Chemical Engineering Science, Volume 44, Issue 9, 1989, Pages 1829-1835, ISSN 0009-2509, http://dx.doi.org/10.1016/0009-2509(89)85125-5. (http://www.sciencedirect.com/science/article/pii/0009250989851255) | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 61829 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 04 Nov 2015 21:16 | |||||||||
| Last Modified: | 10 Nov 2021 22:54 |
Repository Staff Only: item control page
