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Molecular-Ion Effects in Backscattering from Aligned Silicon Crystals

Tombrello, T. A. and Caywood, J. M. (1973) Molecular-Ion Effects in Backscattering from Aligned Silicon Crystals. Physical Review B, 8 (7). pp. 3065-3070. ISSN 0556-2805. doi:10.1103/PhysRevB.8.3065.

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We have observed the proton spectra from equal-velocity beams of H+, H2+, and H3+ incident on aligned silicon crystals. Data for both axial and planar channeling show that the dechanneling is successively greater for the H2+ and H3+ ions than for protons. Since the depth at which dechanneling occured can be deduced from the energy spectrum of the backscattered protons, the comparison of the proton spectrum from molecular-ion bombardment with that produced by incident protons allows us to study the history of the motion in the crystal of the interacting protons from a given molecular ion.

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Additional Information:©1973 The American Physical Society Received 8 March 1973 The authors wish to thank T.A. Weaver for his contribution to the development of the mathematical models that were used in the analysis of our data.
Issue or Number:7
Record Number:CaltechAUTHORS:TOMprb73
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6220
Deposited By: Archive Administrator
Deposited On:28 Nov 2006
Last Modified:08 Nov 2021 20:32

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