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Studies of Electron-Molecule Collisions in Semiconductor Processing Plasmas

Winstead, Carl L. and Lee, Chuo-Han and McKoy, B. Vincent (1999) Studies of Electron-Molecule Collisions in Semiconductor Processing Plasmas. In: Solid State Physics Symposium. No.41. University Press , Hyderabad, pp. 18-21. ISBN 81-7371-198-4.

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In the plasmas used in semiconductor fabrication, collisions between electrons and polyatomic molecules produce reactive fragments that drive etching and other processes at the wafer surface. Extensive and reliable data on electron-molecular collisions are therefore essential to simulations of plasma reactors. For the low electron energies and polyatomic gases (e.g., C_2F_6C_4F_8) that are of interest, both measurements and calculations are difficult, and many needed cross sections are lacking. However, rapid advances in computer speeds now make such calculations feasible. Because the fastest computers are highly parallel, both a formulation that accounts well for the physics of low-energy collisions and an implementation that is efficient on parallel architectures are required. We will give an overview of our formulation of the electron-molecule collision problem and of its implementation for parallel machines, and of some results of its application that will illustrate the progress we have made in studying polyatomic gases of interest to the semiconductor industry.

Item Type:Book Section
Additional Information:© 1999. This work was supported by Sematech, Inc., and by Intel Corp.
Funding AgencyGrant Number
Issue or Number:41
Record Number:CaltechAUTHORS:20151118-114019915
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:62202
Deposited By: Ruth Sustaita
Deposited On:18 Nov 2015 23:20
Last Modified:03 Oct 2019 09:16

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