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Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe

Zhao, Li-Dong and Tan, Gangjian and Hao, Shiqiang and He, Jiaqing and Pei, Yanling and Chi, Hang and Wang, Heng and Gong, Shengkai and Xu, Huibin and Dravid, Vinayak P. and Uher, Ctirad and Snyder, G. Jeffrey and Wolverton, Chris and Kanatzidis, Mercouri G. (2016) Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe. Science, 351 (6269). pp. 141-144. ISSN 0036-8075. http://resolver.caltech.edu/CaltechAUTHORS:20151207-130558945

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Abstract

Thermoelectric technology, harvesting electric power directly from heat, is a promising environmentally-friendly means of energy savings and power generation. The thermoelectric efficiency is determined by the device dimensionless figure of merit ZT_(dev), and optimizing this efficiency requires maximizing ZT values over a broad temperature range. Herein, we report a record high ZT_(dev) ∼1.34, with ZT ranging from 0.7 to 2.0 at 300-773K, realized in hole doped SnSe crystals. The exceptional performance arises from the ultra-high power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe. SnSe is a robust thermoelectric candidate for energy conversion applications in the low and moderate temperature range.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1126/science.aad3749DOIArticle
http://classic.sciencemag.org/content/351/6269/141.longPublisherArticle
http://classic.sciencemag.org/content/351/6269/141/suppl/DC1PublisherSupplemental Materials
ORCID:
AuthorORCID
Snyder, G. Jeffrey0000-0003-1414-8682
Additional Information:© 2015 American Association for the Advancement of Science. Received 3 September 2015; accepted 12 November 2015. Published online 26 November 2015. This work was supported in part by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences under Award Numbers DE-SC0014520 (GJT, HC, VPD, SQH, CW and MGK), EFRC grant DE-SC0001054 (CU) and S3TEC-EFRC grant # DE-SC0001299 (GJS). This work was also supported by the “Zhuoyue” Program from Beihang University and the Recruitment Program for Young Professionals and NSFC under Grant No. 51571007 (LDZ, YLP, SKG and HBX). The synthesis, characterization, transport measurements and DFT calculations were supported by DE-SC0014520. The validation measurements were supported by DE-SC0001299. Measurements at University of Michigan (CU) were supported by DE-SC0001054. All the data in the main text and the supplementary materials are available online: www.sciencemag.org.
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0014520
Department of Energy (DOE)DE-SC0001054
Department of Energy (DOE)DE-SC0001299
Beihang UniversityUNSPECIFIED
National Science Foundation of China (NSFC)51571007
Department of Energy (DOE)DE-SC0014520
Department of Energy (DOE)DE-SC0001299
Department of Energy (DOE)DE-SC0001054
Record Number:CaltechAUTHORS:20151207-130558945
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20151207-130558945
Official Citation:Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe Li-Dong Zhao, Gangjian Tan, Shiqiang Hao, Jiaqing He, Yanling Pei, Hang Chi, Heng Wang, Shengkai Gong, Huibin Xu, Vinayak P. Dravid, Ctirad Uher, G. Jeffrey Snyder, Chris Wolverton, and Mercouri G. Kanatzidis Science 8 January 2016: 351 (6269), 141-144.Published online 26 November 2015 [DOI:10.1126/science.aad3749]
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:62655
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:08 Dec 2015 16:59
Last Modified:13 Jan 2016 21:44

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