Eriksson, L. and Davies, J. A. and Mayer, J. W. (1969) Ion Implantation Studies in Silicon. Science, 163 (3868). pp. 627-633. ISSN 0036-8075. doi:10.1126/science.163.3868.627. https://resolver.caltech.edu/CaltechAUTHORS:20151211-155449249
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Abstract
"Channeling" techniques have been applied to the study of ion implantation in silicon.
Item Type: | Article | ||||||||||||
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Additional Information: | © 1969 American Association for the Advancement of Science. | ||||||||||||
Issue or Number: | 3868 | ||||||||||||
DOI: | 10.1126/science.163.3868.627 | ||||||||||||
Record Number: | CaltechAUTHORS:20151211-155449249 | ||||||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20151211-155449249 | ||||||||||||
Official Citation: | Ion Implantation Studies in Silicon L. Eriksson, J. A. Davies, and J. W. Mayer Science 14 February 1969: 163 (3868), 627-633. [DOI:10.1126/science.163.3868.627] | ||||||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||||||
ID Code: | 62831 | ||||||||||||
Collection: | CaltechAUTHORS | ||||||||||||
Deposited By: | Tony Diaz | ||||||||||||
Deposited On: | 11 Dec 2015 23:58 | ||||||||||||
Last Modified: | 10 Nov 2021 23:07 |
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