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Ion Implantation Studies in Silicon

Eriksson, L. and Davies, J. A. and Mayer, J. W. (1969) Ion Implantation Studies in Silicon. Science, 163 (3868). pp. 627-633. ISSN 0036-8075. http://resolver.caltech.edu/CaltechAUTHORS:20151211-155449249

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Abstract

"Channeling" techniques have been applied to the study of ion implantation in silicon.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1126/science.163.3868.627DOIArticle
http://www.sciencemag.org/content/163/3868/627PublisherArticle
http://www.jstor.org/stable/1726317JSTORArticle
Additional Information:© 1969 American Association for the Advancement of Science.
Record Number:CaltechAUTHORS:20151211-155449249
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20151211-155449249
Official Citation:Ion Implantation Studies in Silicon L. Eriksson, J. A. Davies, and J. W. Mayer Science 14 February 1969: 163 (3868), 627-633. [DOI:10.1126/science.163.3868.627]
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:62831
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:11 Dec 2015 23:58
Last Modified:11 Dec 2015 23:58

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