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Sintered copper sponges for use at low temperature

Goodstein, D. L. and McCormick, W. D. and Dash, J. G. (1966) Sintered copper sponges for use at low temperature. Cryogenics, 6 (3). pp. 167-168. ISSN 0011-2275. https://resolver.caltech.edu/CaltechAUTHORS:20151214-123257188

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Abstract

IN several recently reported studies on the properties of adsorbed films of helium1- 4 we have used a sintered copper sponge as the adsorption substrate. The sponge provides a surface of large area in compact geometry. It also has rapid thermal equilibrium throughout its mass, approaching the high thermal conductivity of bulk polycrystalline copper metal. If the sponge is sintered inside a copper container, it sinters to the walls so assuring thermal contact with the container at low temperature. Use of the sponge and the technique of making it has evinced considerable interest in private communications, since the combination of high thermal conductivity and high surface area makes it potentially suitable both for adsorption studies, and as a material for increasing the thermal contact between a vessel and its contents at very low temperatures. This note describes the fabrication and some of the properties of these sponges.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0011-2275(66)90023-3DOIArticle
http://www.sciencedirect.com/science/article/pii/0011227566900233PublisherArticle
Additional Information:© 1966 Elsevier. Received 10 April 1966. This work was sponsored in part by the Air Force Office of Scientific Research, Grant AF-AFOSR-923-65.
Funders:
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)AFOSR-923-65
Issue or Number:3
Record Number:CaltechAUTHORS:20151214-123257188
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20151214-123257188
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:62881
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:14 Dec 2015 21:26
Last Modified:03 Oct 2019 09:23

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