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Fabrication and Characterization of ZnSn_xGe_(1-x)N_2 Alloys for Light Absorbers

Shing, Amanda M. and Coronel, Naomi C. and Lewis, Nathan S. and Atwater, Harry A. (2015) Fabrication and Characterization of ZnSn_xGe_(1-x)N_2 Alloys for Light Absorbers. In: IEEE 42nd Photovoltaic Specialist Conference (PVSC). IEEE , Piscataway, NJ, pp. 1-4.

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The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSn_xGe_(1-x)N_2. The sputtered thin-films show potential for ZnSn_xGe_(1-x)N_2 to be tunable semiconductor photovoltaic absorber materials.

Item Type:Book Section
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URLURL TypeDescription DOIArticle
Lewis, Nathan S.0000-0001-5245-0538
Atwater, Harry A.0000-0001-9435-0201
Alternate Title:Fabrication and Characterization of ZnSnxGe1-xN2 Alloys for Light
Additional Information:© 2015 IEEE. The authors gratefully acknowledge support from the Dow Chemical Company under the earth abundant semiconductor project. We also thank the Joint Center for Artificial Photosynthesis and the Molecular Materials Research Center at Caltech for instrument access.
Funding AgencyGrant Number
Dow Chemical CompanyUNSPECIFIED
Subject Keywords:absorber material, nitrides, reactive RF sputtering, thin-films, tunable band gap materials
Record Number:CaltechAUTHORS:20151223-115056420
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Official Citation:Shing, Amanda M.; Coronel, Naomi C.; Lewis, Nathan S.; Atwater, Harry A., "Fabrication and characterization of ZnSnxGe1???xN2 alloys for light absorbers," in Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd , vol., no., pp.1-4, 14-19 June 2015 doi: 10.1109/PVSC.2015.7355918
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:63187
Deposited By: Tony Diaz
Deposited On:23 Dec 2015 20:19
Last Modified:10 Nov 2021 23:13

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