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Single crystal Cu_2O photovoltaics by the floating zone method

Omelchenko, Stefan T. and Tolstova, Yulia and Wilson, Samantha S. and Atwater, Harry A. and Lewis, Nathan S. (2015) Single crystal Cu_2O photovoltaics by the floating zone method. In: IEEE 42nd Photovoltaic Specialist Conference (PVSC). IEEE , Piscataway, NJ, pp. 1-4. https://resolver.caltech.edu/CaltechAUTHORS:20151224-073038812

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Abstract

Cu_2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu_2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu_2O in order to controllably study the interfacial reactions between Cu_2O and its heterojunction partners. While inclusions of CuO are inherent to the floating zone growth process we show that they can be removed by post-annealing with phase purity and crystallinity shown by x-ray diffraction. We discuss the role of CuO inclusions on the electronic properties of single crystal Cu_2O wafers using Hall measurements. Changes in the resistivity and mobility due to post-annealing are correlated to changing defect densities obtained from steady-state photoluminescence. The optimization of the Cu_2O wafers provides a pathway towards the first float zone single crystal Cu_2O photovoltaic device.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/PVSC.2015.7355920 DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7355920PublisherArticle
ORCID:
AuthorORCID
Omelchenko, Stefan T.0000-0003-1104-9291
Atwater, Harry A.0000-0001-9435-0201
Lewis, Nathan S.0000-0001-5245-0538
Alternate Title:Single crystal Cu2O photovoltaics by the floating zone method
Additional Information:© 2015 IEEE. This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DESC0004993.
Group:JCAP
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0004993
Subject Keywords:Cuprous oxide, floating zone, single crystal, earth abundant photovoltaic
Record Number:CaltechAUTHORS:20151224-073038812
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20151224-073038812
Official Citation:Omelchenko, Stefan T.; Tolstova, Yulia; Wilson, Samantha S.; Atwater, Harry A.; Lewis, Nathan S., "Single crystal Cu2O photovoltaics by the floating zone method," in Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd , vol., no., pp.1-4, 14-19 June 2015 doi: 10.1109/PVSC.2015.7355920
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:63207
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:24 Dec 2015 17:32
Last Modified:03 Oct 2019 09:26

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