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GaP/Si heterojunction solar cells

Chen, Christopher T. and Saive, Rebecca and Emmer, Hal S. and Aloni, Shaul and Atwater, Harry A. (2015) GaP/Si heterojunction solar cells. In: IEEE 42nd Photovoltaic Specialist Conference (PVSC). IEEE , Piscataway, NJ, pp. 1-4. http://resolver.caltech.edu/CaltechAUTHORS:20151224-075956285

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Abstract

The world record efficiency and open circuit voltage for crystalline silicon solar cells are held by a-Si/Si heterojunction devices. While a-Si provides excellent surface passivation, these heterojunction devices are limited by non-ideal optical and electronic properties. Gallium phosphide is a candidate material for replacing a-Si in a heterojunction device, promising lower parasitic absorption and better carrier mobilities. In this work, we present our results in growing high quality GaP thin films directly on Si using a two-step nucleation and growth scheme with metalorganic chemical vapor deposition, characterization, and x-ray photoelectron spectroscopy band offset measurements toward realizing a GaP/Si heterojunction device.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/PVSC.2015.7356244 DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7356244PublisherArticle
ORCID:
AuthorORCID
Chen, Christopher T.0000-0001-5848-961X
Saive, Rebecca0000-0001-7420-9155
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2015 IEEE. The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335 for band offset characterization, and the structural and electrical characterization is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Critical support and equipment were provided by the Kavli Nanoscience Institute. This work benefited from use of the Applied Physics and Materials Science Department’s Transmission Electron Microscopy Facility. XPS data were collected at the Molecular Materials Research Center of the Beckman Institute of the California Institute of Technology.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-EE0006335
NSFEEC-1041895
Department of Energy (DOE)DE-AC02-05CH11231
Subject Keywords:photovoltaic cells, silicon, gallium phosphide, heterojunctions
Record Number:CaltechAUTHORS:20151224-075956285
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20151224-075956285
Official Citation:Chen, Christopher T.; Saive, Rebecca; Emmer, Hal S.; Aloni, Shaul; Atwater, Harry A., "GaP/Si heterojunction solar cells," in Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd , vol., no., pp.1-3, 14-19 June 2015 doi: 10.1109/PVSC.2015.7356244
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:63211
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:24 Dec 2015 17:29
Last Modified:27 Nov 2017 21:28

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