Chen, Christopher T. and Saive, Rebecca and Emmer, Hal S. and Aloni, Shaul and Atwater, Harry A. (2015) GaP/Si heterojunction solar cells. In: IEEE 42nd Photovoltaic Specialist Conference (PVSC). IEEE , Piscataway, NJ, pp. 1-4. https://resolver.caltech.edu/CaltechAUTHORS:20151224-075956285
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Abstract
The world record efficiency and open circuit voltage for crystalline silicon solar cells are held by a-Si/Si heterojunction devices. While a-Si provides excellent surface passivation, these heterojunction devices are limited by non-ideal optical and electronic properties. Gallium phosphide is a candidate material for replacing a-Si in a heterojunction device, promising lower parasitic absorption and better carrier mobilities. In this work, we present our results in growing high quality GaP thin films directly on Si using a two-step nucleation and growth scheme with metalorganic chemical vapor deposition, characterization, and x-ray photoelectron spectroscopy band offset measurements toward realizing a GaP/Si heterojunction device.
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| Additional Information: | © 2015 IEEE. The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335 for band offset characterization, and the structural and electrical characterization is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Critical support and equipment were provided by the Kavli Nanoscience Institute. This work benefited from use of the Applied Physics and Materials Science Department’s Transmission Electron Microscopy Facility. XPS data were collected at the Molecular Materials Research Center of the Beckman Institute of the California Institute of Technology. | |||||||||
| Group: | Kavli Nanoscience Institute | |||||||||
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| Subject Keywords: | photovoltaic cells, silicon, gallium phosphide, heterojunctions | |||||||||
| DOI: | 10.1109/PVSC.2015.7356244 | |||||||||
| Record Number: | CaltechAUTHORS:20151224-075956285 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20151224-075956285 | |||||||||
| Official Citation: | Chen, Christopher T.; Saive, Rebecca; Emmer, Hal S.; Aloni, Shaul; Atwater, Harry A., "GaP/Si heterojunction solar cells," in Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd , vol., no., pp.1-3, 14-19 June 2015 doi: 10.1109/PVSC.2015.7356244 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 63211 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 24 Dec 2015 17:29 | |||||||||
| Last Modified: | 10 Nov 2021 23:13 |
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