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Diameter-dependent conductance of InAs nanowires

Scheffler, Marc and Nadj-Perge, Stevan and Kouwenhoven, Leo P. and Borgström, Magnus T. and Bakkers, Erik P. A. M. (2009) Diameter-dependent conductance of InAs nanowires. Journal of Applied Physics, 106 (12). Art. No. 124303. ISSN 0021-8979. doi:10.1063/1.3270259.

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Electrical conductance through InAsnanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAsnanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare different nanowire batches. At room temperature, we find a diameter-independent conductivity for diameters larger than 40 nm, indicative of three-dimensional diffusive transport. For smaller diameters, the resistance increases considerably, in coincidence with a strong suppression of the mobility. From an analysis of the effective charge carrier density, we find indications for a surface accumulation layer.

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Nadj-Perge, Stevan0000-0002-2916-360X
Additional Information:© 2009 American Institute of Physics. Received 21 September 2009. Accepted 02 November 2009. Published online 17 December 2009. We thank Juriaan van Tilburg and Claes Thelander for helpful discussions. This work was supported by the EU-project NODE (Grant No. 015783).
Funding AgencyGrant Number
EU-project NODE015783
Issue or Number:12
Record Number:CaltechAUTHORS:20160112-104948904
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Official Citation:Diameter-dependent conductance of InAs nanowires Marc Scheffler, Stevan Nadj-Perge, Leo P. Kouwenhoven, Magnus T. Borgström and Erik P. A. M. Bakkers J. Appl. Phys. 106, 124303 (2009);
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:63587
Deposited By: Ruth Sustaita
Deposited On:12 Jan 2016 19:11
Last Modified:10 Nov 2021 23:18

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