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Edge Transport in the Trivial Phase of InAs/GaSb

Nichele, Fabrizio and Suominen, Henri J. and Kjaergaard, Morten and Marcus, Charles M. and Sajadi, Ebrahim and Folk, Joshua A. and Qu, Fanming and Beukman, Arjan J. A. and de Vries, Folkert K. and van Veen, Jasper and Nadj-Perge, Stevan and Kouwenhoven, Leo P. and Nguyen, Binh-Minh and Kiselev, Andrey A. and Yi, Wei and Sokolich, Marko and Manfra, Michael J. and Spanton, Eric M. and Moler, Kathryn A. (2016) Edge Transport in the Trivial Phase of InAs/GaSb. New Journal of Physics, 18 (8). Art. No. 083005 . ISSN 1367-2630. http://resolver.caltech.edu/CaltechAUTHORS:20160112-150307051

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Abstract

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1088/1367-2630/18/8/083005 DOIArticle
http://iopscience.iop.org/article/10.1088/1367-2630/18/8/083005/metaPublisherArticle
http://arxiv.org/abs/1511.01728arXivDiscussion Paper
ORCID:
AuthorORCID
Nadj-Perge, Stevan0000-0002-2916-360X
Additional Information:© 2016 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Received 15 May 2016; Revised 6 July 2016; Accepted for publication 7 July 2016; Published 28 July 2016. This work was supported by Microsoft Corporation Station Q. The work at Copenhagen was also supported by the Danish National Research Foundation and Villum Foundation. The work at Delft was also supported by funding from the Netherlands Foundation for Fundamental Research on Matter (FOM). The work at Stanford was supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Contract No. DE-AC02-76SF00515. F N acknowledges support of the European Community through the Marie Curie Fellowship, grant agreement No. 659653. JF and ES acknowledge support from QMI, NSERC, and CFI.
Funders:
Funding AgencyGrant Number
Microsoft Corporation Station QUNSPECIFIED
Danish National Research FoundationUNSPECIFIED
Villum FoundationUNSPECIFIED
Stichting voor Fundamenteel Onderzoek der Materie (FOM)UNSPECIFIED
Department of Energy (DOE)DE-AC02-76SF00515
Marie Curie Fellowship659653
QMIUNSPECIFIED
Natural Sciences and Engineering Research Council of Canada (NSERC)UNSPECIFIED
Canada Foundation for InnovationUNSPECIFIED
Subject Keywords:quantum spin Hall effect, topological insulator, scanning SQUID, InAs/GaSb
Record Number:CaltechAUTHORS:20160112-150307051
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20160112-150307051
Official Citation:Fabrizio Nichele et al 2016 New J. Phys. 18 083005
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:63606
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:12 Jan 2016 23:36
Last Modified:05 May 2017 17:59

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