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Direct interelectrode tunneling in GaSe

Kurtin, S. L. and McGill, T. C. and Mead, C. A. (1971) Direct interelectrode tunneling in GaSe. Physical Review B, 3 (10). pp. 3368-3379. ISSN 0556-2805.

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Using thin films of the layer compound gallium selenide, we have fabricated experimental structures which are nearly ideal for the study of tunneling currents. All of the parameters relevant to current flow in these structures can be independently determined since single-crystal gallium selenide films have the properties of the bulk material and also well-defined interfaces. A new analytical technique for determining the energy-momentum dispersion relation within the forbidden gap of a solid is discussed and applied to current-voltage data obtained from metal-GaSe-metal structures. The resulting E-k relation is shown to be an intrinsic property of GaSe. Tunneling currents in GaSe are shown to be quantitatively understood in terms of this E-k relation, the geometry of a given structure, and a simple model of current flow via tunneling.

Item Type:Article
Additional Information:©1971 The American Physical Society. Received 13 January 1971. Work supported in part by the Office of Naval Research.
Record Number:CaltechAUTHORS:KURprb71
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6394
Deposited By: Tony Diaz
Deposited On:07 Dec 2006
Last Modified:26 Dec 2012 09:20

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