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Fabrication of small laterally patterned multiple quantum wells

Scherer, A. and Craighead, H. G. (1986) Fabrication of small laterally patterned multiple quantum wells. Applied Physics Letters, 49 (19). pp. 1284-1286. ISSN 0003-6951. doi:10.1063/1.97387.

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A technique of high voltage electron beam lithography and BCI_3/Ar reactive ion etching for laterally patterning GaAs/Al_0_3 Ga_(0.7) As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.

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Additional Information:© 1986 American Institute of Physics. Received 17 July 1986 Accepted 15 September 1986. The authors received part of their support from the Department of the Army, contract number DAAK20-85-C-0395. The help of E. Beebe and L. Schiavone is also gratefully acknowledged. We thank M. Tamargo for the molecular beam epitaxially grown quantum well material.
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Department of the ArmyDAAK20-85-C-0395
Issue or Number:19
Record Number:CaltechAUTHORS:20160126-095219159
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:63966
Deposited By: Kate Finigan
Deposited On:27 Jan 2016 20:11
Last Modified:10 Nov 2021 23:23

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