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570 mV photovoltage, stabilized n-Si/CoO_x heterojunction photoanodes fabricated using atomic layer deposition

Zhou, Xinghao and Liu, Rui and Sun, Ke and Papadantonakis, Kimberly M. and Brunschwig, Bruce S. and Lewis, Nathan S. (2016) 570 mV photovoltage, stabilized n-Si/CoO_x heterojunction photoanodes fabricated using atomic layer deposition. Energy and Environmental Science, 9 (3). pp. 892-897. ISSN 1754-5692. http://resolver.caltech.edu/CaltechAUTHORS:20160202-092151363

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Abstract

Heterojunction photoanodes, consisting of n-type crystalline Si(100) substrates coated with a thin ∼50 nm film of cobalt oxide fabricated using atomic-layer deposition (ALD), exhibited photocurrent-onset potentials of −205 ± 20 mV relative to the formal potential for the oxygen-evolution reaction (OER), ideal regenerative solar-to-O_2(g) conversion efficiencies of 1.42 ± 0.20%, and operated continuously for over 100 days (∼2500 h) in 1.0 M KOH(aq) under simulated solar illumination. The ALD CoO_x thin film: (i) formed a heterojunction with the n-Si(100) that provided a photovoltage of 575 mV under 1 Sun of simulated solar illumination; (ii) stabilized Si photoanodes that are otherwise unstable when operated in aqueous alkaline electrolytes; and, (iii) catalyzed the oxidation of water, thereby reducing the kinetic overpotential required for the reaction and increasing the overall efficiency relative to electrodes that do not have an inherently electrocatalytic coating. The process provides a simple, effective method for enabling the use of planar n-Si(100) substrates as efficient and durable photoanodes in fully integrated, photovoltaic-biased solar fuels generators.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1039/C5EE03655KDOIArticle
http://pubs.rsc.org/en/Content/ArticleLanding/2016/EE/C5EE03655KPublisherArticle
ORCID:
AuthorORCID
Zhou, Xinghao0000-0001-9229-7670
Sun, Ke0000-0001-8209-364X
Papadantonakis, Kimberly M.0000-0002-9900-5500
Brunschwig, Bruce S.0000-0002-6135-6727
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2016 The Royal Society of Chemistry. Received 4th December 2015, Accepted 8th January 2016. First published online 08 Jan 2016. This work was supported by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993. Atomic-force microscopy and UV-Vis spectroscopy were performed at the Molecular Materials Resource Center (MMRC) of the Beckman Institute at the California Institute of Technology. This work was additionally supported by the Gordon and Betty Moore Foundation under Award No. GBMF1225.
Group:JCAP
Funders:
Funding AgencyGrant Number
Joint Center for Artificial PhotosynthesisUNSPECIFIED
Department of Energy (DOE)DE-SC0004993
Gordon and Betty Moore FoundationGBMF1225
Record Number:CaltechAUTHORS:20160202-092151363
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20160202-092151363
Official Citation:570 mV photovoltage, stabilized n-Si/CoOx heterojunction photoanodes fabricated using atomic layer deposition Xinghao Zhou, Rui Liu, Ke Sun, Kimberly M. Papadantonakis, Bruce S. Brunschwig and Nathan S. Lewis Energy Environ. Sci., 2016, Advance Article DOI: 10.1039/C5EE03655K, Communication First published online : 08 Jan 2016
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:64154
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:02 Feb 2016 22:43
Last Modified:29 Mar 2018 17:38

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