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Electrical, Photoelectrochemical, and Photoelectron Spectroscopic Investigation of the Interfacial Transport and Energetics of Amorphous TiO_2/Si Heterojunctions

Hu, Shu and Richter, Matthias H. and Lichterman, Michael F. and Beardslee, Joseph and Mayer, Thomas and Brunschwig, Bruce S. and Lewis, Nathan S. (2016) Electrical, Photoelectrochemical, and Photoelectron Spectroscopic Investigation of the Interfacial Transport and Energetics of Amorphous TiO_2/Si Heterojunctions. Journal of Physical Chemistry C, 120 (6). pp. 3117-3129. ISSN 1932-7447. https://resolver.caltech.edu/CaltechAUTHORS:20160202-092151875

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Abstract

Solid-state electrical, photoelectrochemical, and photoelectron spectroscopic techniques have been used to characterize the behavior and electronic structure of interfaces between n-Si, n^+-Si, or p^+-Si surfaces and amorphous coatings of TiO_2 formed using atomic-layer deposition. Photoelectrochemical measurements of n-Si/TiO_2/Ni interfaces in contact with a series of one-electron, electrochemically reversible redox systems indicated that the n-Si/TiO_2/Ni structure acted as a buried junction whose photovoltage was independent of the formal potential of the contacting electrolyte. Solid-state current–voltage analysis indicated that the built-in voltage of the n-Si/TiO_2 heterojunction was ∼0.7 V, with an effective Richardson constant ∼1/100th of the value of typical Si/metal Schottky barriers. X-ray photoelectron spectroscopic data allowed formulation of energy band-diagrams for the n-Si/TiO_2, n^+-Si/TiO_2, and p^+-Si/TiO_2 interfaces. The XPS data were consistent with the rectifying behavior observed for amorphous TiO_2 interfaces with n-Si and n^+-Si surfaces and with an ohmic contact at the interface between amorphous TiO_2 and p^+-Si.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/acs.jpcc.5b09121DOIArticle
http://pubs.acs.org/doi/abs/10.1021/acs.jpcc.5b09121PublisherArticle
http://pubs.acs.org/doi/suppl/10.1021/acs.jpcc.5b09121Related ItemSupporting Information
ORCID:
AuthorORCID
Hu, Shu0000-0002-5041-0169
Richter, Matthias H.0000-0003-0091-2045
Lichterman, Michael F.0000-0002-0710-7068
Brunschwig, Bruce S.0000-0002-6135-6727
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2015 American Chemical Society. Received: September 18, 2015. Revised: December 7, 2015. Publication Date (Web): December 15, 2015. This work was supported through the Office of Science of the U.S. Department of Energy under Award DE-SC0004993 to the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub. The authors thank Dr. Gang Liu and Prof. Chongwu Zhou at the University of Southern California for their support of variable-temperature solid-state transport measurements. The authors also acknowledge Dr. Slobodan Mitrovic and Natalie Becerra for assistance in the collection of XPS data, as well as Dr. Kimberley Papadantonakis for assistance with editing this manuscript. S.H. and M.H.R. contributed equally to this work. The authors declare no competing financial interest.
Group:JCAP
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0004993
Joint Center for Artificial Photosynthesis (JCAP)UNSPECIFIED
Issue or Number:6
Record Number:CaltechAUTHORS:20160202-092151875
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20160202-092151875
Official Citation:Electrical, Photoelectrochemical, and Photoelectron Spectroscopic Investigation of the Interfacial Transport and Energetics of Amorphous TiO2/Si Heterojunctions Shu Hu, Matthias H. Richter, Michael F. Lichterman, Joseph Beardslee, Thomas Mayer, Bruce S. Brunschwig, and Nathan S. Lewis The Journal of Physical Chemistry C 2016 120 (6), 3117-3129 DOI: 10.1021/acs.jpcc.5b09121
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:64156
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:02 Feb 2016 22:36
Last Modified:08 Oct 2019 22:27

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