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Nanoscale strain engineering of graphene and graphene-based devices

Yeh, N.-C. and Hsu, C.-C. and Teague, M. L. and Wang, J.-Q. and Boyd, D. A. and Chen, C.-C. (2016) Nanoscale strain engineering of graphene and graphene-based devices. Acta Mechanica Sinica, 32 (3). pp. 497-509. ISSN 0567-7718. doi:10.1007/s10409-015-0548-9.

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Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.

Item Type:Article
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Yeh, N.-C.0000-0002-1826-419X
Alternate Title:Nano-scale strain engineering of graphene and graphene-based devices
Additional Information:© 2016 The Chinese Society of Theoretical and Applied Mechanics; Institute of Mechanics, Chinese Academy of Sciences and Springer-Verlag Berlin Heidelberg. Received: 16 July 2015. Revised: 31 August 2015. Accepted: 2 November 2015. First online: 07 February 2016. This project was jointly supported by the National Science Foundation under the Institute for Quantum Information and Matter at California Institute of Technology, a grant from the Northrup Grumman Cooperation, and a gift from Mr. Lewis van Amerongen.
Group:Institute for Quantum Information and Matter
Funding AgencyGrant Number
Institute for Quantum Information and Matter (IQIM)UNSPECIFIED
Northrup GrummanUNSPECIFIED
Lewis van AmerongenUNSPECIFIED
Subject Keywords:Graphene; Strain-engineering; Nanostructures; Dirac fermions; Pseudo-magnetic field; Valleytronics
Issue or Number:3
Record Number:CaltechAUTHORS:20160217-102636750
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Official Citation:Yeh, NC., Hsu, CC., Teague, M.L. et al. Acta Mech. Sin. (2016) 32: 497. doi:10.1007/s10409-015-0548-9
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:64531
Deposited By: Ruth Sustaita
Deposited On:17 Feb 2016 19:44
Last Modified:10 Nov 2021 23:32

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