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Silicon nanowire devices

Chung, Sung-Wook and Yu, Jae-Young and Heath, James R. (2000) Silicon nanowire devices. Applied Physics Letters, 76 (15). pp. 2068-2070. ISSN 0003-6951. doi:10.1063/1.126257.

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Transport measurements were carried out on 15–35 nm diameter silicon nanowires grown using SiH4 chemical vapor deposition via Au or Zn particle-nucleated vapor-liquid-solid growth at 440°C. Both Al and Ti/Au contacts to the wires were investigated. The wires, as produced, were essentially intrinsic, although Au nucleated wires exhibited a slightly higher conductance. Thermal treatment of the fabricated devices resulted in better electrical contacts, as well as diffusion of dopant atoms into the nanowires, and increased the nanowire conductance by as much as 10^4. Three terminal devices indicate that the doping of the wires is p type.

Item Type:Article
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Heath, James R.0000-0001-5356-4385
Additional Information:© 2000 American Institute of Physics. Received 13 December 1999; accepted 9 February 2000. The authors would like to thank Professor Paul McEuen for helpful discussions. This work was funded by the ONR (Grant No. N00014-98-1-0422) and DARPA.
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-98-1-0422
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Subject Keywords:silicon; nanostructured materials; nanotechnology; elemental semiconductors; chemical vapour deposition; electrical conductivity; semiconductor-metal boundaries; annealing; semiconductor quantum wires; contact resistance
Issue or Number:15
Record Number:CaltechAUTHORS:CHUapl00
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6472
Deposited By: Tony Diaz
Deposited On:11 Dec 2006
Last Modified:08 Nov 2021 20:34

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