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Origin of undesirable cracks during layer transfer

Ponson, L. and Diest, K. and Atwater, H. A. and Ravichandran, G. and Bhattacharya, K. (2008) Origin of undesirable cracks during layer transfer. . (Submitted)

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We investigate the origin of undesirable transverse cracks often observed in thin films obtained by the layer transfer technique. During this process, two crystals bonded to each other containing a weak plan produced by ion implantation are heated to let a thin layer of one of the material on the other. The level of stress imposed on the film during the heating phase due to the mismatch of thermal expansion coefficients of the substrate and the film is shown to be the relevant parameter of the problem. In particular, it is shown that if the film is submitted to a tensile stress, the microcracks produced by ion implantation are not stable and deviate from their straight trajectory making the layer transfer process impossible. However, if the compressive stress exceeds a threshold value, after layer transfer, the film can buckle and delaminate, leading to transverse cracks induced by bending. As a result, we show that the imposed stress σ_m - or equivalently the heating temperature - must be within the range -σ_c < σ_m < 0 to produce an intact thin film where σ_c depends on the interfacial fracture energy and the size of defects at the interface between film and substrate.

Item Type:Report or Paper (Discussion Paper)
Related URLs:
URLURL TypeDescription Paper
Atwater, H. A.0000-0001-9435-0201
Ravichandran, G.0000-0002-2912-0001
Bhattacharya, K.0000-0003-2908-5469
Additional Information:February 23, 2013. Submitted on 28 Oct 2008. This work has been supported by the Center for the Science and Engineering of Materials (CSEM).
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Record Number:CaltechAUTHORS:20160322-074244346
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:65569
Deposited By: Ruth Sustaita
Deposited On:30 Mar 2016 23:57
Last Modified:09 Mar 2020 13:19

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