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Graded ferroelectric capacitors with robust temperature characteristics

El-Naggar, Mohamed Y. and Dayal, Kaushik and Goodwin, David G. and Bhattacharya, Kaushik (2006) Graded ferroelectric capacitors with robust temperature characteristics. Journal of Applied Physics, 100 (11). Art. No. 114115. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:NAGjap06

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Abstract

Ferroelectric thin films offer the possibility of engineering the dielectric response for tunable components in frequency-agile rf and microwave devices. However, this approach often leads to an undesired temperature sensitivity. Compositionally graded ferroelectric films have been explored as a means of redressing this sensitivity, but experimental observations vary depending on geometry and other details. In this paper, we present a continuum model to calculate the capacitive response of graded ferroelectric films with realistic electrode geometries by accurately accounting for the polarization distribution and long-range electrostatic interactions. We show that graded c-axis poled BaxSr_(1−xT)iO_3 BST parallel plate capacitors are ineffective while graded a-axis poled BST coplanar capacitors with interdigitated electrodes are extremely effective in obtaining high and temperature-stable dielectric properties.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.2369650DOIUNSPECIFIED
ORCID:
AuthorORCID
Dayal, Kaushik0000-0002-0516-3066
Bhattacharya, Kaushik0000-0003-2908-5469
Additional Information:© 2006 American Institute of Physics. (Received 15 June 2006; accepted 19 August 2006; published online 13 December 2006) One of the authors (M.Y.E.) would like to acknowledge an Applied Materials graduate fellowship. This work was partially funded by the U.S. Department of Defense MURI award DAAD19-01-1-0517, administered by the Army Research Office. Author preprint, deposited 13 December 2006.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)DAAD19-01-1-0517
Subject Keywords:Ferroelectrics, Graded Thin Films, Tunable Microwave Devices, High Dielectric Constant, barium compounds; strontium compounds; ferroelectric thin films; ferroelectric capacitors; thin film capacitors
Issue or Number:11
Record Number:CaltechAUTHORS:NAGjap06
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:NAGjap06
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6565
Collection:CaltechAUTHORS
Deposited By: Kaushik Dayal
Deposited On:13 Dec 2006
Last Modified:02 Oct 2019 23:34

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