Richer, I. and Middlebrook, R. D. (1963) Power-law nature of field-effect transistor experimental characteristics. Proceedings of the IEEE, 51 (8). pp. 1145-1146. ISSN 0018-9219. doi:10.1109/PROC.1963.2457. https://resolver.caltech.edu/CaltechAUTHORS:20160405-100716448
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Abstract
In making experimental measurements of field-effect transistor static drain characteristics in the pinch-off region, determination of the effective pinch-off voltage is not possible by direct measurement because of the presence of spurious drain current at and beyond pinch-off. Further, indirect measurement is hampered by the absence of a theoretical straight-line function from which the pinch-off voltage may be obtained as an intercept or a slope. In this communication a power-law relation for the transfer characteristic is assumed, from which values of both the pinch-off voltage and the exponent may be obtained directly from a straight-line plot of experimental quantities.
Item Type: | Article | |||||||||
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Additional Information: | © 1963 IEEE. Received May 13. 1963. The work reported here was supported in part by funds made available by the Jet Propulsion Laboratory, California Institute of Technology. Pasadena, under NASA Contract No. NAS 7-100. | |||||||||
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Issue or Number: | 8 | |||||||||
DOI: | 10.1109/PROC.1963.2457 | |||||||||
Record Number: | CaltechAUTHORS:20160405-100716448 | |||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20160405-100716448 | |||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
ID Code: | 65924 | |||||||||
Collection: | CaltechAUTHORS | |||||||||
Deposited By: | INVALID USER | |||||||||
Deposited On: | 06 Apr 2016 18:59 | |||||||||
Last Modified: | 10 Nov 2021 23:51 |
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