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Power-law nature of field-effect transistor experimental characteristics

Richer, I. and Middlebrook, R. D. (1963) Power-law nature of field-effect transistor experimental characteristics. Proceedings of the IEEE, 51 (8). pp. 1145-1146. ISSN 0018-9219. doi:10.1109/PROC.1963.2457. https://resolver.caltech.edu/CaltechAUTHORS:20160405-100716448

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Abstract

In making experimental measurements of field-effect transistor static drain characteristics in the pinch-off region, determination of the effective pinch-off voltage is not possible by direct measurement because of the presence of spurious drain current at and beyond pinch-off. Further, indirect measurement is hampered by the absence of a theoretical straight-line function from which the pinch-off voltage may be obtained as an intercept or a slope. In this communication a power-law relation for the transfer characteristic is assumed, from which values of both the pinch-off voltage and the exponent may be obtained directly from a straight-line plot of experimental quantities.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/PROC.1963.2457DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1444387PublisherArticle
Additional Information:© 1963 IEEE. Received May 13. 1963. The work reported here was supported in part by funds made available by the Jet Propulsion Laboratory, California Institute of Technology. Pasadena, under NASA Contract No. NAS 7-100.
Funders:
Funding AgencyGrant Number
NASA/JPL/CaltechNAS 7-100
Issue or Number:8
DOI:10.1109/PROC.1963.2457
Record Number:CaltechAUTHORS:20160405-100716448
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20160405-100716448
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:65924
Collection:CaltechAUTHORS
Deposited By:INVALID USER
Deposited On:06 Apr 2016 18:59
Last Modified:10 Nov 2021 23:51

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