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A Simple Derivation of Field-Effect Transistor Characteristics

Middlebrook, R. D. (1963) A Simple Derivation of Field-Effect Transistor Characteristics. Proceedings of the IEEE, 51 (8). pp. 1146-1147. ISSN 0018-9219. http://resolver.caltech.edu/CaltechAUTHORS:20160405-161455616

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Abstract

In the conventional treatment of the field effect transistor, the first step is the specification of an impurity profile that describes the nature of the gate-channel contact. Solutions for the static and small-signal characteristics are then valid only for the particular impurity profile chosen, and must be repeated from the beginning for different structures. The purpose of this communication is to present a simple, though approximate, development of the characteristics of an FET without specifying the detailed nature of the structure. The charge-control approach is used, and it is shown that in the pinch-off region the relation between the drain current and the gate-source voltage is approximately square law. The results are applicable to all gate-channel structures, including the insulated gate types.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/PROC.1963.2458DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1444388PublisherArticle
Additional Information:© 1963 IEEE. Received May 13. 1963. The work reported here was supported in part by funds made available by the Jet Propulsion Laboratory, California Institute of Technology. Pasadena, under NASA Contract No. NAS 7-100.
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Funding AgencyGrant Number
NASA/JPL/CaltechNAS 7-100
Record Number:CaltechAUTHORS:20160405-161455616
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20160405-161455616
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:65947
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:06 Apr 2016 18:38
Last Modified:06 Apr 2016 18:38

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