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A Simple Derivation of Field-Effect Transistor Characteristics

Middlebrook, R. D. (1963) A Simple Derivation of Field-Effect Transistor Characteristics. Proceedings of the IEEE, 51 (8). pp. 1146-1147. ISSN 0018-9219. doi:10.1109/PROC.1963.2458.

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In the conventional treatment of the field effect transistor, the first step is the specification of an impurity profile that describes the nature of the gate-channel contact. Solutions for the static and small-signal characteristics are then valid only for the particular impurity profile chosen, and must be repeated from the beginning for different structures. The purpose of this communication is to present a simple, though approximate, development of the characteristics of an FET without specifying the detailed nature of the structure. The charge-control approach is used, and it is shown that in the pinch-off region the relation between the drain current and the gate-source voltage is approximately square law. The results are applicable to all gate-channel structures, including the insulated gate types.

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Additional Information:© 1963 IEEE. Received May 13. 1963. The work reported here was supported in part by funds made available by the Jet Propulsion Laboratory, California Institute of Technology. Pasadena, under NASA Contract No. NAS 7-100.
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NASA/JPL/CaltechNAS 7-100
Issue or Number:8
Record Number:CaltechAUTHORS:20160405-161455616
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:65947
Deposited On:06 Apr 2016 18:38
Last Modified:10 Nov 2021 23:51

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