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Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Maher, Michael J. and Mori, Kazunori and Sirard, Stephen M. and Dinhobl, Andrew M. and Bates, Christopher M. and Gurer, Emir and Blachut, Gregory and Lane, Austin P. and Durand, William J. and Carlson, Matthew C. and Strahan, Jeffrey R. and Ellison, Christopher J. and Willson, C. Grant (2016) Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers. ACS Macro Letters, 5 (3). pp. 391-395. ISSN 2161-1653.

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Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition–fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO_2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries.

Item Type:Article
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Maher, Michael J.0000-0003-0577-3726
Bates, Christopher M.0000-0002-1598-794X
Additional Information:© 2016 American Chemical Society. Received: January 4, 2016; accepted: February 25, 2016; published: March 1, 2016. The authors thank Nissan Chemical Industries, Lam Research, the ASTC, and the National Science Foundation (Grants EECS-1120823 and EEC-1160494) for financial support. The authors thank Michael T. Sheehan of Dupont Electronic Technologies for helpful discussions on RAFT polymerization. The authors also thank Robert Grubbs. MJM thanks National Science Foundation Graduate Research Fellowship (Grant No. DGE-1110007) for financial support. G.B. thanks the Paul D. Meek Endowed Graduate Fellowship in Engineering for support. W.J.D. thanks the Virginia and Ernest Cockrell, Jr. Fellowships in Engineering for partial support. C.J.E. thanks the Welch Foundation (Grant #F-1709) for partial financial support. G.W. thanks the Rashid Engineering Regents Chair and the Welch Foundation (Grant #F-1830) for partial financial support. Any opinion, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation or the sponsors. This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. These authors contributed equally to this work (M.J.M. and K.M.). The authors declare no competing financial interest.
Funding AgencyGrant Number
Nissan Chemical IndustriesUNSPECIFIED
Association of Science - Technology Centers (ASTC)UNSPECIFIED
NSF Graduate Research FellowshipDGE-1110007
Paul D. Meek Endowed Graduate Fellowship in EngineeringUNSPECIFIED
Virginia and Ernest Cockrell, Jr. Fellowships in EngineeringUNSPECIFIED
Welch FoundationF-1709
Rashid Engineering Regents ChairUNSPECIFIED
Welch FoundationF-1830
Department of Energy (DOE)DE-AC02-06CH11357
Issue or Number:3
Record Number:CaltechAUTHORS:20160415-113745200
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Official Citation:Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers. Michael J. Maher, Kazunori Mori, Stephen M. Sirard, Andrew M. Dinhobl, Christopher M. Bates, Emir Gurer, Gregory Blachut, Austin P. Lane, William J. Durand, Matthew C. Carlson, Jeffrey R. Strahan, Christopher J. Ellison, and C. Grant Willson. ACS Macro Letters 2016 5 (3), 391-395. DOI: 10.1021/acsmacrolett.6b00005
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:66221
Deposited By: Melissa Ray
Deposited On:18 Apr 2016 18:38
Last Modified:09 Mar 2020 13:19

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