CaltechAUTHORS
  A Caltech Library Service

Ultrafast metal-insulator-multi-wall carbon nanotube tunneling diode employing asymmetrical structure effect

Shin, Jeong Hee and Im, Jaehan and Choi, Ji-Woong and Kim, Hyun Sik and Sohn, Jung Inn and Cha, Seung Nam and Jang, Jae Eun (2016) Ultrafast metal-insulator-multi-wall carbon nanotube tunneling diode employing asymmetrical structure effect. Carbon, 102 . pp. 172-180. ISSN 0008-6223. https://resolver.caltech.edu/CaltechAUTHORS:20160425-145530438

[img] MS Word - Supplemental Material
See Usage Policy.

3511Kb

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20160425-145530438

Abstract

Ultra-fast diode structures based on non-semiconductive materials employing tunneling mechanism have been investigated. Applying the structurally asymmetric effect of multi-wall carbon nanotube (MWCNT) to a vertical metal-insulator-MWCNT (MIC) tunneling diode structure, the ‘on-off’ ratio (∼10^4) and the current density (38.2 MA/cm^2) are drastically enhanced compared to those of conventional metal-insulator-metal (MIM) tunneling diodes. The electrical characteristics are stable up to 423 K. Experimentally, rectifying performance of the MIC diode is good up to 10 MHz and the cut-off frequency of the MIC diode is estimated to be 6.47 THz. The growth process of MWCNT is more controllable for the number and the position than that of SWCNT. Therefore, it has a high probability of realization. The vertically aligned single MWCNT design can guarantee an ultra-high integration density, as well. Therefore, the MIC diode can be applied to various high frequency applications, such as communication devices, high speed electrical switches, and high performance control process units (CPUs), or other new concept devices.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/j.carbon.2016.02.035DOIArticle
http://www.sciencedirect.com/science/article/pii/S0008622316301282PublisherArticle
Additional Information:© 2016 Elsevier Ltd. Received 7 October 2015. Received in revised form 2 February 2016. Accepted 10 February 2016. Available online 15 February 2016. This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2015R1A2A2A01005043) and DGIST R&D Program of MSIP (16-BD-0404)
Funders:
Funding AgencyGrant Number
National Research Foundation of Korea2015R1A2A2A01005043
Daegu Gyeongbuk Institute of Science and Technology (DGIST)16-BD-0404
Record Number:CaltechAUTHORS:20160425-145530438
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20160425-145530438
Official Citation:Jeong Hee Shin, Jaehan Im, Ji-Woong Choi, Hyun Sik Kim, Jung Inn Sohn, Seung Nam Cha, Jae Eun Jang, Ultrafast metal-insulator-multi-wall carbon nanotube tunneling diode employing asymmetrical structure effect, Carbon, Volume 102, June 2016, Pages 172-180, ISSN 0008-6223, http://dx.doi.org/10.1016/j.carbon.2016.02.035. (http://www.sciencedirect.com/science/article/pii/S0008622316301282)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:66462
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:26 Apr 2016 04:05
Last Modified:03 Oct 2019 09:56

Repository Staff Only: item control page