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Amorphization reaction in thin films of elemental Cu and Y

Johnson, R. W. and Ahn, C. C. and Ratner, E. R. (1989) Amorphization reaction in thin films of elemental Cu and Y. Physical Review B, 40 (12). pp. 8139-8148. ISSN 0163-1829. doi:10.1103/PhysRevB.40.8139.

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Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh-vacuum dc ion-beam deposition chamber. The amorphization reaction was monitored by in situ x-ray-diffraction measurements. Growth of amorphous Cu1-xYx is observed at room temperature with the initial formation of a Cu-rich amorphous phase. Further annealing in the presence of unreacted Y leads to Y enrichment of the amorphous phase. Growth of crystalline CuY is observed for T=469 K. Transmission-electron-microscopy measurements provide real-space imaging of the amorphous interlayer and growth morphology. Models are developed, incorporating metastable interfacial and bulk free-energy diagrams, for the early stage of the amorphization reaction.

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Additional Information:©1989 The American Physical Society Received 2 March 1989 We thank M-A. Nicolet for several useful conversations, L. Guttman for several useful comments, and C.M. Garland for technical support. One of us (R.W.J.) thanks the Chaim Weizmann Foundation and one of us (E.R.R.) thanks the Max Beeler Alcom Foundation for financial support during the course of this work. Portions of this work were supported by the U.S. Department of Energy through Contract No. DE-FG03-86ER45242. Primary support by the National Science Foundation - Materials Research Groups Grant No. DMR-8421119 is gratefully acknowledged.
Issue or Number:12
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Deposited On:16 Dec 2006
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