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Exponential Lifetime Improvement in Topological Quantum Memories

Bardyn, Charles-Edouard and Karzig, Torsten (2016) Exponential Lifetime Improvement in Topological Quantum Memories. Physical Review B, 94 (9). Art. No. 094303. ISSN 2469-9950. http://resolver.caltech.edu/CaltechAUTHORS:20160510-083818088

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Abstract

We propose a simple yet efficient mechanism for passive error correction in topological quantum memories. Our scheme relies on driven-dissipative ancilla systems which couple to local excitations (anyons) and make them “sink” in energy, with no required interaction among ancillae or anyons. Through this process, anyons created by some thermal environment end up trapped in potential “trenches” that they themselves generate, which can be interpreted as a “memory foam” for anyons. This self-trapping mechanism provides an energy barrier for anyon propagation and removes entropy from the memory by favoring anyon recombination over anyon separation (responsible for memory errors). We demonstrate that our scheme leads to an exponential increase of the memory-coherence time with system size L, up to an upper bound L_(max), which can increase exponentially with Δ/T, where T is the temperature and Δ is some energy scale defined by potential trenches. This results in a double exponential increase of the memory time with Δ/T, which greatly improves over the Arrhenius (single-exponential) scaling found in typical quantum memories.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevB.94.094303DOIArticle
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.094303PublisherArticle
http://arxiv.org/abs/1512.04528arXivDiscussion Paper
ORCID:
AuthorORCID
Karzig, Torsten0000-0003-0834-0547
Additional Information:© 2016 American Physical Society. Received 6 January 2016; revised manuscript received 14 April 2016; published 13 September 2016. We thank Gil Refael for his support and feedback. We are also grateful to John Preskill, Spyridon Michalakis, and Fernando Pastawski for valuable discussions. This work was funded by the Swiss National Science Foundation (SNSF) and the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center with support of the Gordon and Betty Moore Foundation (Grant No. GBMF1250). C.-E. B. acknowledges support from the National Science Foundation (NSF) under Grant Nos. DMR-1410435 and PHY11-25915.
Group:IQIM, Institute for Quantum Information and Matter
Funders:
Funding AgencyGrant Number
Swiss National Science Foundation (SNSF)UNSPECIFIED
Institute for Quantum Information and Matter (IQIM)UNSPECIFIED
Gordon and Betty Moore FoundationGBMF1250
NSFDMR-1410435
NSFPHY11-25915
Record Number:CaltechAUTHORS:20160510-083818088
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20160510-083818088
Official Citation:Exponential lifetime improvement in topological quantum memories Charles-Edouard Bardyn and Torsten Karzig Phys. Rev. B 94, 094303 (2016)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:66833
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:11 May 2016 00:17
Last Modified:28 Sep 2016 18:42

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