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Ion trap in a semiconductor chip

Stick, D. and Hensinger, W. K. and Olmschenk, S. and Madsen, M. J. and Schwab, K. and Monroe, C. (2006) Ion trap in a semiconductor chip. Nature Physics, 2 (1). pp. 36-39. ISSN 1745-2473. https://resolver.caltech.edu/CaltechAUTHORS:20160523-114031722

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Abstract

The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose–Einstein condensation of cold gases to the precise quantum control of individual atomic ions. Work on miniaturizing electromagnetic traps to the micrometre scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass-spectrometer arrays, compact atomic clocks and, most notably, large-scale quantum information processors. Here we report the operation of a micrometre-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool and measure heating of a single ^(111)Cd^+ ion in an integrated radiofrequency trap etched from a doped gallium-arsenide heterostructure.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1038/nphys171DOIArticle
http://www.nature.com/nphys/journal/v2/n1/abs/nphys171.htmlPublisherArticle
https://arxiv.org/abs/quant-ph/0601052arXivDiscussion Paper
ORCID:
AuthorORCID
Schwab, K.0000-0001-8216-4815
Additional Information:© 2006 Nature Publishing Group. Received 15 September 2005; accepted 28 October 2005; published 11 December 2005. We acknowledge useful discussions with J. A. Rabchuk, S. Horst, T. Olver, K. Eng, P. Lee, P. Haljan, K.-A. Brickman, L. Deslauriers and M. Acton. This work was supported by the US Advanced Research and Development Activity and National Security Agency under Army Research Office contract W911NF-04-1-0234, and the National Science Foundation Information Technology Research Program. The authors declare that they have no competing financial interests.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)W911NF-04-1-0234
National Security AgencyUNSPECIFIED
NSFUNSPECIFIED
Advanced Research and Development ActivityUNSPECIFIED
Issue or Number:1
Record Number:CaltechAUTHORS:20160523-114031722
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20160523-114031722
Official Citation:Ion trap in a semiconductor chip D. Stick, W. K. Hensinger, S. Olmschenk, M. J. Madsen, K. Schwab and C. Monroe Nature Physics 2, 36 - 39 (2006) doi:10.1038/nphys171
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:67258
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:23 May 2016 19:05
Last Modified:03 Oct 2019 10:04

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