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Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH_4/H_2/N_2 plasma enhanced chemical vapor deposition

Ficek, Mateusz and Sankaran, Kamatchi J. and Ryl, Jacek and Bogdanowicz, Robert and Lin, I-Nan and Haenen, Ken and Darowicki, Kazimierz (2016) Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH_4/H_2/N_2 plasma enhanced chemical vapor deposition. Applied Physics Letters, 108 (24). Art. No. 241906. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20160616-075157968

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Abstract

The influence of N2 concentration (1%–8%) in CH_4/H_2/N_2 plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH_4/H_2 plasma contained micron-sized diamond grains, the films grown using CH_4/H_2/(4%)N_2 plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.4953779DOIArticle
http://scitation.aip.org/content/aip/journal/apl/108/24/10.1063/1.4953779PublisherArticle
ORCID:
AuthorORCID
Bogdanowicz, Robert0000-0002-7543-2620
Additional Information:© 2016 AIP Publishing LLC. Received 29 February 2016. Accepted 31 May 2016. Published online 14 June 2016. This work was supported by the Polish National Science Centre (NCN) under Grant Nos. 2014/14/M/ST5/00715 and 2015/17/D/ST5/02571. The DS funds of the Faculty of Electronics, Telecommunications, and Informatics and the Faculty of Chemistry at the Gdansk University of Technology are also acknowledged. Kamatchi J. Sankaran is an FWO Postdoctoral Fellow of the Research Foundations—Flanders (FWO). R. Bogdanowicz wants to thank Prof. W. A. Goddard for invitation and hosting in California Institute of Technology. The Fulbright Commission is acknowledged for financial support of this fellowship.
Funders:
Funding AgencyGrant Number
National Science Centre (Poland)2014/14/M/ST5/00715
National Science Centre (Poland)2015/17/D/ST5/02571
Gdansk University of TechnologyUNSPECIFIED
Fonds Wetenschappelijk Onderzoek - Vlaanderen (FWO)UNSPECIFIED
Fulbright CommissionUNSPECIFIED
Record Number:CaltechAUTHORS:20160616-075157968
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20160616-075157968
Official Citation:Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition Mateusz Ficek, Kamatchi J. Sankaran, Jacek Ryl, Robert Bogdanowicz, I-Nan Lin, Ken Haenen and Kazimierz Darowicki Appl. Phys. Lett. 108, 241906 (2016); http://dx.doi.org/10.1063/1.4953779
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:67962
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:16 Jun 2016 19:56
Last Modified:20 Nov 2017 18:59

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