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The gain and carrier density in semiconductor lasers under steady-state and transient conditions

Zhao, Bin and Chen, T. R. and Yariv, Amnon (1992) The gain and carrier density in semiconductor lasers under steady-state and transient conditions. IEEE Journal of Quantum Electronics, 28 (6). pp. 1479-1486. ISSN 0018-9197. doi:10.1109/3.135300.

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The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression effect. A general expression for high-order nonlinear gain coefficients is obtained. This formalism is used to describe the carrier and power dynamics in semiconductor lasers above and below threshold in the static and transient regimes.

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Zhao, Bin0000-0001-8438-9188
Additional Information:© 1992 IEEE. Reprinted with permission. Manuscript received March 6, 1991; revised August 30, 1992. This work was supported by the Office of Naval Research, the National Science Foundation, and the Army Research Office.
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Office of Naval Research (ONR)UNSPECIFIED
Army Research Office (ARO)UNSPECIFIED
Issue or Number:6
Record Number:CaltechAUTHORS:ZHAieeejqe92
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6842
Deposited By: Archive Administrator
Deposited On:26 Dec 2006
Last Modified:08 Nov 2021 20:37

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