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Evidence of Simultaneous Double-Electron Promotion in F+ Collisions with Surfaces

Mace, J. and Gordon, M. J. and Giapis, K. P. (2006) Evidence of Simultaneous Double-Electron Promotion in F+ Collisions with Surfaces. Physical Review Letters, 97 (25). Art. No. 257603. ISSN 0031-9007. doi:10.1103/PhysRevLett.97.257603.

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A high-flux beam of mass-filtered F+ at low energy (100–1300 eV) was scattered off Al and Si surfaces to study core-level excitations of F0 and F+. Elastic scattering behavior for F+ was observed at energies <300 (500) eV off Al (Si) for a 90° lab angle. However, above this energy threshold, orbital mixing in the hard collision step results in electronic excitation of F via molecular orbital promotion along the 4fsigma (F-2p), significantly reducing the observed ion exit energy. In addition, despite the electronegativity of F, scattering at energies >450 (700) eV off Al (Si) produces F2+—behavior which is remarkably similar to Ne+ off the same surfaces. Inelasticities measured for single collision events agree well with the energy deficits required to form (doubly excited) F** and F+** states from F0 and F+, respectively; these excited species most likely decay to inelastic F+ and F2+ via autoionization.

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Giapis, K. P.0000-0002-7393-298X
Additional Information:© 2006 The American Physical Society (Received 15 August 2006; published 22 December 2006) This work was based on research funded by the National Science Foundation (No. CTS-0317397).
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Issue or Number:25
Record Number:CaltechAUTHORS:MACprl06
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6863
Deposited By: Archive Administrator
Deposited On:29 Dec 2006
Last Modified:08 Nov 2021 20:37

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