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Tip-Enhanced Fluorescence Microscopy at 10 Nanometer Resolution

Gerton, Jordan M. and Wade, Lawrence A. and Lessard, Guillaume A. and Ma, Z. and Quake, Stephen R. (2004) Tip-Enhanced Fluorescence Microscopy at 10 Nanometer Resolution. Physical Review Letters, 93 (18). Art. No. 180801. ISSN 0031-9007. doi:10.1103/PhysRevLett.93.180801.

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We demonstrate unambiguously that the field enhancement near the apex of a laser-illuminated silicon tip decays according to a power law that is moderated by a single parameter characterizing the tip sharpness. Oscillating the probe in intermittent contact with a semiconductor nanocrystal strongly modulates the fluorescence excitation rate, providing robust optical contrast and enabling excellent background rejection. Laterally encoded demodulation yields images with <10 nm spatial resolution, consistent with independent measurements of tip sharpness.

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Additional Information:© 2004 The American Physical Society (Received 12 December 2003; published 28 October 2004) We thank Delia Milliron, Ben Boussert, and Paul Alivisatos for the nanocrystals and acknowledge the financial support of Bruce Burrows and Pharmagenomix Inc. J.M.G. was partially supported by the Beckman Institute.
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Caltech Beckman InstituteUNSPECIFIED
Subject Keywords:near-field scanning optical microscopy; fluorescence; silicon; elemental semiconductors; nanostructured materials
Issue or Number:18
Record Number:CaltechAUTHORS:GERprl04
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6869
Deposited By: Archive Administrator
Deposited On:30 Dec 2006
Last Modified:08 Nov 2021 20:37

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