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Dual Influence of Reduction Annealing on Diffused Hematite/FTO Junction for Enhanced Photoelectrochemical Water Oxidation

Yang, Xiaogang and Liu, Rui and Lei, Yan and Li, Pinjiang and Wang, Ke and Zheng, Zhi and Wang, Dunwei (2016) Dual Influence of Reduction Annealing on Diffused Hematite/FTO Junction for Enhanced Photoelectrochemical Water Oxidation. ACS Applied Materials & Interfaces, 8 (25). pp. 16476-16485. ISSN 1944-8244. http://resolver.caltech.edu/CaltechAUTHORS:20160629-132009561

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Abstract

Band structure engineering of the interface between the semiconductor and the conductive substrate may profoundly influence charge separation and transport for photovoltaic and photoelectrochemical devices. In this work, we found that a reduction-annealing treatment resulted in a diffused junction through enhanced interdiffusion of hematite/FTO at the interface. The activated hematite exhibited higher nanoelectric conductivity that was probed by a PeakForce TUNA AFM method. Furthermore, charge accumulation and recombination via surface states at the interface were dramatically reduced after the reduction-annealing activation, which was confirmed by transient surface photovoltage measurements. The diffused hematite junction promises improved photoelectrochemical performance without the need for a buffer layer.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/acsami.6b04213DOIArticle
http://pubs.acs.org/doi/abs/10.1021/acsami.6b04213PublisherArticle
http://pubs.acs.org/doi/suppl/10.1021/acsami.6b04213PublisherSupporting Information
ORCID:
AuthorORCID
Yang, Xiaogang0000-0002-1142-3100
Lei, Yan0000-0003-2906-0050
Zheng, Zhi0000-0002-5889-4305
Additional Information:© 2016 American Chemical Society Received: April 8, 2016 Accepted: June 8, 2016 Published: June 8, 2016 We thank Prof. Dejun Wang from Jilin University for his help with the TSPV instrument. X.Y. and P.L. were supported by the grant from the Henan Province Office of Education (14B150013) and Henan Province of International Science & Technology Cooperation (134300510061). Z.Z. was supported by the grant from the National Natural Science Foundation of China (21273192), Program for Innovative Research Team, University of Henan Province (2012IRTSTHN021) and Innovation Scientists and Technicians Troop Construction Projects of Henan Province (144200510014). R.L. is supported by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science, U.S. Department of Energy, under Award Number DE-SC0004993. XPS studies were carried out at the Molecular Materials Research Center of the Beckman Institute of the California Institute of Technology. D.W. was supported by the National Science Foundation (DMR 1055762).
Group:JCAP
Funders:
Funding AgencyGrant Number
Henan Province Office of Education14B150013
Henan Province of International Science & Technology Cooperation134300510061
National Natural Science Foundation of China21273192
Program for Innovative Research Team, University of Henan Province2012IRTSTHN021
Innovation Scientists and Technicians Troop Construction Projects of Henan Province144200510014
Department of Energy (DOE)DE-SC0004993
Caltech Beckman InstituteUNSPECIFIED
NSFDMR 1055762
Subject Keywords:diffused junction, hematite/FTO interface, reduction-annealing activation, transient surface photovoltage, nanoelectric conductivity
Non-Subject Keywords:diffused junction, hematite/FTO interface, reduction-annealing activation, transient surface photovoltage, nanoelectric conductivity
Record Number:CaltechAUTHORS:20160629-132009561
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20160629-132009561
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:68758
Collection:CaltechAUTHORS
Deposited By: Donna Wrublewski
Deposited On:29 Jun 2016 22:23
Last Modified:23 Apr 2019 21:03

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