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Linear tailored gain broad area semiconductor lasers

Lindsey, Christopher P. and Mehuys, David and Yariv, Amnon (1987) Linear tailored gain broad area semiconductor lasers. IEEE Journal of Quantum Electronics, 23 (6). pp. 775-787. ISSN 0018-9197.

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Tailored gain semiconductor lasers capable of high-power operation with single-lobed, nearly diffraction limited beamwidths only a few degrees wide have been demonstrated in proton implanted chirped arrays and "halftone" broad area lasers. We analyze lasers with a linear gain gradient, and obtain analytic approximations for their unsaturated optical eigenmodes. Unlike a uniform array, the fundamental mode of a linear tailored gain laser is the lasing mode at threshold. Mode discrimination may be controlled by varying the spatial gain gradient. All modes of asymmetric tailored gain waveguides have single-lobed far-field patterns offset from 0°. Finally, we utilize tailored gain broad area lasers to make a measurement of the anti-guiding parameter, and find b = 2.5 +/- 0.5, in agreement with previous results.

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Additional Information:“© 1987 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.” Manuscript received July 30, 1986; revised February 16, 1987. The research described in this paper was performed by the Department of Applied Physics, California Institute of Technology, under contracts with the Office of Naval Research and the National Science Foundation.
Issue or Number:6
Record Number:CaltechAUTHORS:LINieeejqe87
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:696
Deposited By: Tony Diaz
Deposited On:15 Sep 2005
Last Modified:02 Oct 2019 22:36

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