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Wafer-Size and Single-Crystal MoSe_2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting

Chen, Zuxin and Liu, Huiqiang and Chen, Xuechen and Chu, Guang and Chu, Sheng and Zhang, Hang (2016) Wafer-Size and Single-Crystal MoSe_2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting. ACS Applied Materials & Interfaces, 8 (31). pp. 20267-20273. ISSN 1944-8244. https://resolver.caltech.edu/CaltechAUTHORS:20160815-134234491

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Abstract

Two-dimensional (2D) atomic-layered semiconductors are important for next-generation electronics and optoelectronics. Here, we designed the growth of an MoSe_2 atomic layer on a lattice-matched GaN semiconductor substrate. The results demonstrated that the MoSe_2 films were less than three atomic layers thick and were single crystalline of MoSe_2 over the entire GaN substrate. The ultrathin MoSe_2/GaN heterojunction diode demonstrated ∼850 nm light emission and could also be used in photovoltaic applications.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/acsami.6b04768DOIArticle
http://pubs.acs.org/doi/abs/10.1021/acsami.6b04768PublisherArticle
http://pubs.acs.org/doi/suppl/10.1021/acsami.6b04768PublisherSupporting Information
Additional Information:© 2016 American Chemical Society. Received: April 21, 2016; Accepted: July 13, 2016; Published: July 13, 2016. The authors would like to thank Dr. Y. Chen for assistance in TEM imaging. The work was supported by National Science Foundation of China (grant no. 11204097 and U1530120). Author Contributions: S. C. and H. Z. conceived and designed the experiments. Z. C., H. L., and X. C did the MoSe_2 film growth. Z. C., H. L., and G. C. carried out the characterization experiments. S. C. and G. C. cowrote the paper. Z. C., H. L., and X. C. contributed equally to this work. All authors contributed to analyzing and reviewing the data in this manuscript. Z. Chen, H. Liu, and X. Chen contributed equally. The authors declare no competing financial interest.
Funders:
Funding AgencyGrant Number
National Science Foundation of China11204097
National Science Foundation of ChinaU1530120
Subject Keywords:epitaxy; GaN; heterojunction diode; MoSe2; transition metal dichalcogenides
Issue or Number:31
Record Number:CaltechAUTHORS:20160815-134234491
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20160815-134234491
Official Citation:Wafer-Size and Single-Crystal MoSe2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting Zuxin Chen, Huiqiang Liu, Xuechen Chen, Guang Chu, Sheng Chu, and Hang Zhang ACS Applied Materials & Interfaces 2016 8 (31), 20267-20273 DOI: 10.1021/acsami.6b04768
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:69627
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:15 Aug 2016 21:59
Last Modified:03 Oct 2019 10:24

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