Jariwala, Deep and Davoyan, Artur R. and Tagliabue, Giulia and Sherrott, Michelle C. and Wong, Joeson and Atwater, Harry A. (2016) Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics. Nano Letters, 16 (9). pp. 5482-5487. ISSN 1530-6984. doi:10.1021/acs.nanolett.6b01914. https://resolver.caltech.edu/CaltechAUTHORS:20160907-121115025
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Abstract
We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
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| Additional Information: | © 2016 American Chemical Society. Publication Date (Web): August 26, 2016. Received: May 11, 2016. Revised: August 23, 2016. This work is part of the “Light-Material Interactions in Energy Conversion” Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001293. D.J., A.R.D., and M.C.S. acknowledge additional support from Resnick Sustainability Institute Graduate and Postdoctoral Fellowships. A.R.D. also acknowledges support in part from the Kavli Nanoscience Institute Postdoctoral Fellowship. G.T. acknowledges support in part from the Swiss National Science Foundation, Early Postdoc Mobility Fellowship n.P2EZP2_159101. J.W. acknowledges support from the National Science Foundation Graduate Research Fellowship under Grant No. 1144469. Author Contributions: D.J. prepared the samples and fabricated the devices. A.R.D. performed all the calculations. D.J., G.T., and J.W. performed the electrical and photocurrent measurements. M.C.S. assisted with sample preparation and fabrication. H.A.A. supervised over all the experiments, calculations, and data collection. All authors contributed to data interpretation, presentation, and writing of the manuscript. The authors declare no competing financial interest. | ||||||||||||||
| Group: | Kavli Nanoscience Institute, Resnick Sustainability Institute | ||||||||||||||
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| Subject Keywords: | broadband; heterostructures; light trapping; near-unity absorption; photovoltaics; Transition metal dichalcogenides | ||||||||||||||
| Issue or Number: | 9 | ||||||||||||||
| DOI: | 10.1021/acs.nanolett.6b01914 | ||||||||||||||
| Record Number: | CaltechAUTHORS:20160907-121115025 | ||||||||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20160907-121115025 | ||||||||||||||
| Official Citation: | Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics Deep Jariwala, Artur R. Davoyan, Giulia Tagliabue, Michelle C. Sherrott, Joeson Wong, and Harry A. Atwater Nano Letters 2016 16 (9), 5482-5487 DOI: 10.1021/acs.nanolett.6b01914 | ||||||||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||||||||
| ID Code: | 70195 | ||||||||||||||
| Collection: | CaltechAUTHORS | ||||||||||||||
| Deposited By: | Ruth Sustaita | ||||||||||||||
| Deposited On: | 07 Sep 2016 20:16 | ||||||||||||||
| Last Modified: | 11 Nov 2021 04:25 |
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