A Caltech Library Service

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

Jariwala, Deep and Davoyan, Artur R. and Tagliabue, Giulia and Sherrott, Michelle C. and Wong, Joeson and Atwater, Harry A. (2016) Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics. Nano Letters, 16 (9). pp. 5482-5487. ISSN 1530-6984. doi:10.1021/acs.nanolett.6b01914.

[img] PDF - Submitted Version
See Usage Policy.

[img] PDF (Experimental methods, additional experimental data, calculations, and analysis) - Supplemental Material
See Usage Policy.


Use this Persistent URL to link to this item:


We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

Item Type:Article
Related URLs:
URLURL TypeDescription Information Paper
Jariwala, Deep0000-0002-3570-8768
Davoyan, Artur R.0000-0002-4662-1158
Tagliabue, Giulia0000-0003-4587-728X
Sherrott, Michelle C.0000-0002-7503-9714
Wong, Joeson0000-0002-6304-7602
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2016 American Chemical Society. Publication Date (Web): August 26, 2016. Received: May 11, 2016. Revised: August 23, 2016. This work is part of the “Light-Material Interactions in Energy Conversion” Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001293. D.J., A.R.D., and M.C.S. acknowledge additional support from Resnick Sustainability Institute Graduate and Postdoctoral Fellowships. A.R.D. also acknowledges support in part from the Kavli Nanoscience Institute Postdoctoral Fellowship. G.T. acknowledges support in part from the Swiss National Science Foundation, Early Postdoc Mobility Fellowship n.P2EZP2_159101. J.W. acknowledges support from the National Science Foundation Graduate Research Fellowship under Grant No. 1144469. Author Contributions: D.J. prepared the samples and fabricated the devices. A.R.D. performed all the calculations. D.J., G.T., and J.W. performed the electrical and photocurrent measurements. M.C.S. assisted with sample preparation and fabrication. H.A.A. supervised over all the experiments, calculations, and data collection. All authors contributed to data interpretation, presentation, and writing of the manuscript. The authors declare no competing financial interest.
Group:Kavli Nanoscience Institute, Resnick Sustainability Institute
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0001293
Kavli Nanoscience InstituteUNSPECIFIED
Swiss National Science Foundation (SNSF)P2EZP2_159101
NSF Graduate Research Fellowship1144469
Resnick Sustainability InstituteUNSPECIFIED
Subject Keywords:broadband; heterostructures; light trapping; near-unity absorption; photovoltaics; Transition metal dichalcogenides
Issue or Number:9
Record Number:CaltechAUTHORS:20160907-121115025
Persistent URL:
Official Citation:Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics Deep Jariwala, Artur R. Davoyan, Giulia Tagliabue, Michelle C. Sherrott, Joeson Wong, and Harry A. Atwater Nano Letters 2016 16 (9), 5482-5487 DOI: 10.1021/acs.nanolett.6b01914
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:70195
Deposited By: Ruth Sustaita
Deposited On:07 Sep 2016 20:16
Last Modified:11 Nov 2021 04:25

Repository Staff Only: item control page