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A study of polar codes for MLC NAND flash memories

Li, Yue and Alhussien, Hakim and Haratsch, Erich F. and Jiang, Anxiao (Andrew) (2015) A study of polar codes for MLC NAND flash memories. In: 2015 International Conference on Computing, Networking and Communications (ICNC). IEEE , Piscataway, NJ, pp. 608-612. ISBN 978-1-4799-6959-3. https://resolver.caltech.edu/CaltechAUTHORS:20160922-111302010

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Abstract

The increasing density of NAND flash memories makes data more prone to errors due to severe process variations and disturbance. The urgency to improve NAND flash reliability encourages searching for optimal channel coding methods. This paper reports our efforts towards a read channel for flash memories using polar coding. Our contributions include the solutions to several challenges raised when applying polar codes to NAND flash memories in practice. We propose efficient schemes for shortening both non-systematic and systematic polar codes, making polar codewords be easily adapted to flash page of any size. We demonstrate that the decoding performance of the shortened polar codes and LDPC codes are comparable using the data obtained by our NAND flash characterization platform. We show the feasibility of a practical adaptive decoding framework where it is not necessary to construct new polar codes for different channel parameters. Experimental results show that the decoding performance approaches the optimized performance where different codes are constructed for different channel conditions. To the best of our knowledge, this work is the first study of polar codes for error correction in flash memories.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/ICCNC.2015.7069414DOIArticle
http://ieeexplore.ieee.org/document/7069414/PublisherArticle
Additional Information:© 2015 IEEE. Date Added to IEEE Xplore: 30 March 2015. The authors would like to thank Sundararajan Sankaranarayanan for the many constructive discussions. This work was supported by the University Research Program of LSI Corporation.
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Funding AgencyGrant Number
LSI CorporationUNSPECIFIED
Record Number:CaltechAUTHORS:20160922-111302010
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20160922-111302010
Official Citation:Y. Li, H. Alhussien, E. F. Haratsch and A. A. Jiang, "A study of polar codes for MLC NAND flash memories," Computing, Networking and Communications (ICNC), 2015 International Conference on, Garden Grove, CA, 2015, pp. 608-612. doi: 10.1109/ICCNC.2015.7069414
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:70530
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:22 Sep 2016 20:34
Last Modified:03 Oct 2019 10:31

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