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Data archiving in 1x-nm NAND flash memories: Enabling long-term storage using rank modulation and scrubbing

Li, Yue and Gad, Eyal En and Jiang, Anxiao (Andrew) and Bruck, Jehoshua (2016) Data archiving in 1x-nm NAND flash memories: Enabling long-term storage using rank modulation and scrubbing. In: 2016 IEEE International Reliability Physics Symposium (IRPS). IEEE , Piscataway, NJ, 6C-6. ISBN 978-1-4673-9138-2. http://resolver.caltech.edu/CaltechAUTHORS:20161003-155557445

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Abstract

The challenge of using inexpensive and high-density NAND flash for archival storage was posed recently for reducing data center costs. However, such flash memory is becoming more susceptible to noise, and its reliability issues has become the major concern for its adoption by long-term storage systems. This paper studies the system-level reliability of archival storage that uses 1x-nm NAND flash memory. We analyze retention error behavior, and show that 1x-nm MLC and TLC flash do not immediately qualify for long-term storage. We then implement the rank modulation (RM) scheme and memory scrubbing (MS) for retention period (RP) enhancement. The RM scheme provides a new data representation using the relative order of cell voltages, which provides higher reliability against uniform asymmetric threshold voltage shift due to charge leakage. Results show that the new representation reduces raw bit error rate (RBER) by 45% on average, and using RM and MS together provides up to 196, 171, 146 and 121 years of RPs for blocks with 0, 25, 50 and 75 program/erase cycles, respectively.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/IRPS.2016.7574572 DOIArticle
http://ieeexplore.ieee.org/document/7574572/PublisherArticle
Additional Information:© 2016 IEEE. This work was supported in part by a Caltech CI2 grant.
Funders:
Funding AgencyGrant Number
Caltech Innovation Initiative (CI2)UNSPECIFIED
Subject Keywords:Archival storage, characterization, data retention, NAND flash memories, reliability, rank modulation, scrubbing
Record Number:CaltechAUTHORS:20161003-155557445
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20161003-155557445
Official Citation:Y. Li, E. E. Gad, A. A. Jiang and J. Bruck, "Data archiving in 1x-nm NAND flash memories: Enabling long-term storage using rank modulation and scrubbing," 2016 IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA, 2016, pp. 6C-6-1-6C-6-10. doi: 10.1109/IRPS.2016.7574572
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:70774
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:03 Oct 2016 23:17
Last Modified:03 Oct 2016 23:17

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