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Synthesis of low-melting metal oxide and sulfide nanowires and nanobelts

Rao, R. and Chandrasekaran, H. and Gubbala, S. and Sunkara, M. K. and Daraio, C. and Jin, S. and Rao, A. M. (2006) Synthesis of low-melting metal oxide and sulfide nanowires and nanobelts. Journal of Electronic Materials, 35 (5). pp. 941-946. ISSN 0361-5235.

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The bulk nucleation and basal growth of semiconducting nanowires from molten Ga pools has been demonstrated earlier using oxygen/hydrogen plasma over molten Ga pools. Herein, we extend the above concept for bulk synthesis of oxide and sulfide nanowires of low-melting metal melts such as Sn and In. Specifically, nanowires of β-Ga_2O_3, β-In_2O_3, SnO_2, α-Ga_2S_3, and β-In_2S_3 were synthesized using direct reactions between respective molten metal pools and the gases such as oxygen/hydrogen mixture for oxides and H_2S for sulfides. In the case of β-Ga_2O_3 and SnO_2, a change in the morphology from nanowires to nanobelts was observed with an increase in the synthesis temperature. No such behavior was observed in the case of β-In_2O_3. Furthermore, we present evidence for α-Ga_2S_3 nanowires, which to our knowledge is being reported for the first time in the literature. Our studies with the sulfide nanowires suggest that H_2S reacts directly at the molten metal surface to form gallium sulfide. Finally, we discuss the role of chamber pressure and hydrogen on the size distribution of nanostructured β-Ga_2O_3 and SnO_2.

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Daraio, C.0000-0001-5296-4440
Additional Information:© 2006 TMS-The Minerals, Metals and Materials Society. (Received March 14, 2005; accepted September 23, 2005)
Subject Keywords:Nanowires, nanobelts, Raman
Issue or Number:5
Record Number:CaltechAUTHORS:20161004-125859031
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Official Citation:Rao, R., Chandrasekaran, H., Gubbala, S. et al. Journal of Elec Materi (2006) 35: 941. doi:10.1007/BF02692551
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:70823
Deposited By: George Porter
Deposited On:04 Oct 2016 21:04
Last Modified:03 Oct 2019 16:01

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