Saeedi, Saman and Emami, Azita (2016) A 10Gb/s, 342fJ/bit Micro-Ring Modulator Transmitter with Switched-Capacitor Pre-Emphasis and Monolithic Temperature Sensor in 65nm CMOS. In: VLSI Circuits Digest of Technical Papers, 2016 Symposium. IEEE , Piscataway, NJ, pp. 1-2. ISBN 978-1-5090-0636-6. https://resolver.caltech.edu/CaltechAUTHORS:20161004-140125731
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Abstract
In this work, a CMOS-SiPh optical transmitter based on carrier-injection ring modulators is presented. It features a novel low-power switched-capacitor-based pre-emphasis that effectively compensates the modulator bandwidth limitation. A wavelength stabilization technique via direct measurement of ring temperature using a monolithic PTAT sensor is also presented. The optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit consumes 0.29mW.
| Item Type: | Book Section | |||||||||
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| Additional Information: | © 2016 IEEE. Date Added to IEEE Xplore: 22 September 2016. The authors would like to acknowledge ST Microelectronics for CMOS chip fabrication and OpSIS for SiP chip fabrication. | |||||||||
| DOI: | 10.1109/VLSIC.2016.7573541 | |||||||||
| Record Number: | CaltechAUTHORS:20161004-140125731 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20161004-140125731 | |||||||||
| Official Citation: | S. Saeedi and A. Emami, "A 10Gb/s, 342fJ/bit micro-ring modulator transmitter with switched-capacitor pre-emphasis and monolithic temperature sensor in 65nm CMOS," 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits), Honolulu, HI, USA, 2016, pp. 1-2. doi: 10.1109/VLSIC.2016.7573541 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 70836 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 04 Oct 2016 21:56 | |||||||||
| Last Modified: | 11 Nov 2021 04:36 |
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