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Microfabrication of vertical-cavity surface-emitting laser cavities

Scherer, A. and Jewell, J. L. and Harbison, J. P. and Uomi, K. and Yoo, B. J. and Bhat, R. J. and Walther, M. (1994) Microfabrication of vertical-cavity surface-emitting laser cavities. In: Vertical-Cavity Surface-Emitting Laser Arrays. Proceedings of SPIE. No.2147. Society of Photo-Optical Instrumentation Engineers , Bellingham, WA, pp. 62-71. ISBN 9780819414427.

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We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by using dielectric high reflectivity mirrors which were deposited after the diode fabrication step. This device fabrication sequence is able to correct for inaccuracies in the crystal growth and allows the future development of more complex laser structures. The quantum-well based laser diodes were demonstrated at 0.72 µm, 0.85 µm, and 1.55 µm. Threshold currents and voltages of our 0.85 µm lasers were 2.8 mA at 1.7 V pulsed, and 4 mA when cw-pumped. The threshold currents of 5x7 µm^2 area 1.55 µm devices were 17 mA.

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Additional Information:© 1994 SPIE.
Series Name:Proceedings of SPIE
Issue or Number:2147
Record Number:CaltechAUTHORS:20161018-154740898
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Official Citation:Axel Scherer ; Jack L. Jewell ; James P. Harbison ; Kazuhisa Uomi ; S. J. B. Yoo ; Rajaram J. Bhat ; M. Walther; Microfabrication of vertical-cavity surface-emitting laser cavities. Proc. SPIE 2147, Vertical-Cavity Surface-Emitting Laser Arrays, 62 (June 2, 1994); doi:10.1117/12.177202
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:71243
Deposited By: Tony Diaz
Deposited On:18 Oct 2016 22:57
Last Modified:03 Oct 2019 16:05

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