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Manufacturing of 100mm diameter GaSb substrates for advanced space based applications

Allen, L. P. and Flint, J. P. and Meshew, G. and Trevethan, J. and Dallas, G. and Khoshakhlagh, A. and Hill, C. J. (2012) Manufacturing of 100mm diameter GaSb substrates for advanced space based applications. In: Quantum Sensing and Nanophotonic Devices IX. Proceedings of SPIE. No.8268. Society of Photo-Optical Instrumentation Engineers (SPIE) , Bellingham, WA, Art. No. 826817. ISBN 978-0-81948-911-1. https://resolver.caltech.edu/CaltechAUTHORS:20161101-082835585

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Abstract

Engineered substrates such as large diameter (100mm) GaSb wafers need to be ready years in advance of any major shift in DoD and commercial technology, and typically before much of the rest of the materials and equipment for fabricating next generation devices. Antimony based III-V semiconductors are of significant interest for advanced applications in optoelectronics, high speed transistors, microwave devices, and photovoltaics. GaSb demand is increasing due to its lattice parameter matching of various ternary and quaternary III-V compounds, as their bandgaps can be engineered to cover a wide spectral range. For these stealth and spaced based applications, larger format IRFPAs benefit clearly from next generation starting substrates. In this study, we have manufactured and tested 100mm GaSb substrates. This paper describes the characterization process that provides the best possible GaSb material for advanced IRFPA and SLS epi growth. The analysis of substrate by AFM surface roughness, particles, haze, GaSb oxide character and desorption using XPS, flatness measurements, and SLS based epitaxy quality are shown. By implementing subtle changes in our substrate processing, we show that a Sb-oxide rich surface is routinely provided for rapid desorption. Post-MBE CBIRD structures on the 100mm ULD GaSb were examined and reveals a high intensity, 6.6nm periodicity, low (15.48 arcsec) FWHM peak distribution that suggests low surface strain and excellent lattice matching. The Ra for GaSb is a consistent ~0.2-4nm, with average batch wafer warp of ~4 μm to provide a clean, flat GaSb template critical for next generation epi growth.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1117/12.904777 DOIArticle
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1345110PublisherArticle
Additional Information:© 2012 SPIE Society of Photo-Optical Instrumentation Engineers. The authors gratefully acknowledge the support of IQE, Inc. and the XPS data from Drs. Sayah Saied and Baogui Shi of Midlands Surface Analysis.
Funders:
Funding AgencyGrant Number
IQE Inc.UNSPECIFIED
Subject Keywords:IRFPA, MWIR, antimonides, CBIRD, LWIR, GaSb, surface analysis, MBE
Series Name:Proceedings of SPIE
Issue or Number:8268
Record Number:CaltechAUTHORS:20161101-082835585
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20161101-082835585
Official Citation:L. P. Allen ; J. P. Flint ; G. Meshew ; J. Trevethan ; G. Dallas ; A. Khoshakhlagh ; C. J. Hill; Manufacturing of 100mm diameter GaSb substrates for advanced space based applications. Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826817 (January 20, 2012); doi:10.1117/12.904777.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:71652
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:01 Nov 2016 17:26
Last Modified:03 Oct 2019 16:09

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