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Injection mechanisms in GaAs diffused electroluminescent junctions

Leite, R. C. C. and Sarace, J. C. and Olson, D. H. and Cohen, B. G. and Whelan, J. M. and Yariv, A. (1965) Injection mechanisms in GaAs diffused electroluminescent junctions. Physical Review, 137 (5A). A1583-A1590. ISSN 0031-899X.

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Injection mechanisms responsible for the electroluminescence in GaAs diffused diodes are studied by examining the behavior of the emission peaks as a function of injection level, doping level, temperature, and depletion-layer widths. Three different injection mechanisms seem to be operative in providing radiation at near-band-gap energies. Models for two of these are proposed and tested. The nature of the third emission remains an open question.

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Additional Information:©1965 The American Physical Society. Received 25 September 1964.
Issue or Number:5A
Record Number:CaltechAUTHORS:LEIpr65
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7213
Deposited By: Tony Diaz
Deposited On:18 Jan 2007
Last Modified:02 Oct 2019 23:40

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