Lau, S. S. and Tseng, W. F. and Nicolet, M-A. and Mayer, J. W. and Minnucci, J. A. and Kirkpatrick, A. R. (1978) Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation. Applied Physics Letters, 33 (3). pp. 235-237. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b
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Abstract
We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either <100> or <111> Si single-crystal substrate. The primary defects observed in the <100> case were dislocations, whereas stacking faults were observed in <111> samples.
| Item Type: | Article | ||||||
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| Additional Information: | © 1978 American Institute of Physics. Received 10 April 1978; accepted for publication 29 May 1978. The Caltech group acknowledges the partial financial support of the Office of Naval Research (L. Cooper). | ||||||
| Issue or Number: | 3 | ||||||
| Record Number: | CaltechAUTHORS:LAUapl78b | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 7232 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 25 Jan 2007 | ||||||
| Last Modified: | 02 Oct 2019 23:40 |
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