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Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation

Lau, S. S. and Tseng, W. F. and Nicolet, M-A. and Mayer, J. W. and Minnucci, J. A. and Kirkpatrick, A. R. (1978) Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation. Applied Physics Letters, 33 (3). pp. 235-237. ISSN 0003-6951. doi:10.1063/1.90310.

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We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either <100> or <111> Si single-crystal substrate. The primary defects observed in the <100> case were dislocations, whereas stacking faults were observed in <111> samples.

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Additional Information:© 1978 American Institute of Physics. Received 10 April 1978; accepted for publication 29 May 1978. The Caltech group acknowledges the partial financial support of the Office of Naval Research (L. Cooper).
Issue or Number:3
Record Number:CaltechAUTHORS:LAUapl78b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7232
Deposited By: Tony Diaz
Deposited On:25 Jan 2007
Last Modified:08 Nov 2021 20:40

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