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Cu_2O photovoltaic devices incorporating Zn(O,S) buffer layers

Tolstova, Yulia and Omelchenko, Stefan T. and Blackwell, Raymond E. and Shing, Amanda M. and Atwater, Harry A. (2016) Cu_2O photovoltaic devices incorporating Zn(O,S) buffer layers. In: IEEE 43rd Photovoltaic Specialists Conference. IEEE , Piscataway, NJ, pp. 2833-2835. ISBN 978-1-5090-2724-8.

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Cu_2O is a semiconductor composed of earth — abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu_2O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu_2O solar cell incorporating a Zn(O,S) window layer. We demonstrate that deposition of Zn(O,S) at elevated temperature limits formation of ZnSO_4 and increases the current that can be collected from the cell by 54%.

Item Type:Book Section
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URLURL TypeDescription DOIArticle
Omelchenko, Stefan T.0000-0003-1104-9291
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2016 IEEE. The authors gratefully acknowledge support from the Dow Chemical Company under the earth abundant semiconductor project as well as the Quantum Energy and Sustainable Solar Technologies (QESST), an NSF-DOE research center.
Funding AgencyGrant Number
Dow Chemical CompanyUNSPECIFIED
Department of Energy (DOE)UNSPECIFIED
Record Number:CaltechAUTHORS:20161128-145849058
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Official Citation:Y. Tolstova, S. T. Omelchenko, R. E. Blackwell, A. M. Shing and H. A. Atwater, "Cu2O photovoltaic devices incorporating Zn(O, S) buffer layers," 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR, USA, 2016, pp. 2833-2835. doi: 10.1109/PVSC.2016.7750170
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:72336
Deposited By: Tony Diaz
Deposited On:28 Nov 2016 23:11
Last Modified:11 Nov 2021 05:00

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