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A 50 nanosecond linear gate circuit using transistors

Barna, Arpad and Marshall, J. Howard (1961) A 50 nanosecond linear gate circuit using transistors. Synchrotron Laboratory, CTSL-18. California Institute of Technology , Pasadena, CA. (Unpublished)

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In the past, linear gate circuits for gating pulses of photomultiplier tubes have been mostly based on semiconductor diodes. Using diffused base transistors as a gate in an emitter input configuration provides favorable linearity and feedthrough properties. The circuit described here is an improved version of one developed by A. V. Tollestrup.

Item Type:Report or Paper (Technical Report)
Additional Information:© 1961 California Institute of Technology. Supported in part by the U.S. Atomic Energy Commission Contract No. ΑΤ(11-1)-68. The valuable comments and suggestions of M. Sands and A. V. Tollestrup are gratefully acknowledged.
Group:Synchrotron Laboratory
Funding AgencyGrant Number
U.S. Atomic Energy CommissionΑΤ-(11-1)- 68
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Other Numbering System NameOther Numbering System ID
Series Name:Synchrotron Laboratory
Issue or Number:CTSL-18
Record Number:CaltechAUTHORS:20170109-092857597
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:73326
Deposited By: Ruth Sustaita
Deposited On:09 Jan 2017 18:33
Last Modified:03 Oct 2019 16:26

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