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Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities

Michael, C. P. and Srinivasan, K. and Johnson, T. J. and Painter, O. and Lee, K. H. and Hennessey, K. and Kim, H. and Hu, E. (2007) Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities. Applied Physics Letters, 90 (5). Art. No. 051108. ISSN 0003-6951.

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The quality factors of modes in nearly identical GaAs and Al0.18Ga0.82As microdisks are tracked over three wavelength ranges centered at 980, 1460, and 1600 nm, with quality factors measured as high as 6.62×10^5 in the 1600 nm band. After accounting for surface scattering, the remaining loss is due to sub-band-gap absorption in the bulk and on the surfaces. The observed absorption is, on average, 80% greater in AlGaAs than in GaAs and is 540% higher in both materials at 980 nm than at 1600 nm.

Item Type:Article
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Painter, O.0000-0002-1581-9209
Additional Information:© 2007 American Institute of Physics. (Received 24 October 2006; accepted 20 December 2006; published online 31 January 2007) Two of the authors (C.P.M. and K.S., respectively) would like to thank the Moore Foundation and the Hertz Foundation for their graduate fellowship support. One of the authors (K.H.L.) thanks the Wingate Foundation. One of the authors (H.K.) has been supported by NSF Grant No. 0304678.
Funding AgencyGrant Number
Gordon and Betty Moore FoundationUNSPECIFIED
Fannie and John Hertz FoundationUNSPECIFIED
Wingate FoundationUNSPECIFIED
Subject Keywords:aluminium compounds; gallium arsenide; III-V semiconductors; microcavities; Q-factor; surface scattering; energy gap; micro-optics; infrared spectra; whispering gallery modes
Issue or Number:5
Record Number:CaltechAUTHORS:MICapl07
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:7342
Deposited By: Archive Administrator
Deposited On:01 Feb 2007
Last Modified:12 Dec 2019 17:06

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